Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPC50LC

IRFPC50LC

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
2,794 -

RFQ

IRFPC50LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24STRL

IRF9Z24STRL

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix
2,711 -

RFQ

IRF9Z24STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34STRR

IRF9Z34STRR

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
3,895 -

RFQ

IRF9Z34STRR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC20STRL

IRFBC20STRL

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,458 -

RFQ

IRFBC20STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20STRR

IRFBC20STRR

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,604 -

RFQ

IRFBC20STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30AL

IRFBC30AL

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
3,648 -

RFQ

IRFBC30AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30ASTRL

IRFBC30ASTRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
3,427 -

RFQ

IRFBC30ASTRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30ASTRR

IRFBC30ASTRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,191 -

RFQ

IRFBC30ASTRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRL

IRFBC30STRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,675 -

RFQ

IRFBC30STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRR

IRFBC30STRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,802 -

RFQ

IRFBC30STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40AL

IRFBC40AL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,985 -

RFQ

IRFBC40AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - - - Through Hole
IRFBC40ASTRL

IRFBC40ASTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,519 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40ASTRR

IRFBC40ASTRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,638 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCL

IRFBC40LCL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,636 -

RFQ

IRFBC40LCL

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LC

IRFBC40LC

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
3,264 -

RFQ

IRFBC40LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LCS

IRFBC40LCS

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,411 -

RFQ

IRFBC40LCS

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCSTRL

IRFBC40LCSTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,265 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2303CDS-T1-BE3

SI2303CDS-T1-BE3

MOSFET P-CH 30V 1.9A/2.7A SOT23

Vishay Siliconix
904 -

RFQ

SI2303CDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta), 2.7A (Tc) 4.5V, 10V 190mOhm @ 1.9A, 10V 3V @ 250µA 8 nC @ 10 V ±20V 155 pF @ 15 V - 1W (Ta), 2.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1032X-T1-GE3

SI1032X-T1-GE3

MOSFET N-CH 20V 200MA SC89-3

Vishay Siliconix
150 -

RFQ

SI1032X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8819EDB-T2-E1

SI8819EDB-T2-E1

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Vishay Siliconix
3,859 -

RFQ

SI8819EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 2.9A (Ta) 1.5V, 3.7V 80mOhm @ 1.5A, 3.7V 900mV @ 250µA 17 nC @ 8 V ±8V 650 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 4567891011...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario