Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUM110N03-04P-E3

SUM110N03-04P-E3

MOSFET N-CH 30V 110A TO263

Vishay Siliconix
3,681 -

RFQ

SUM110N03-04P-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 110A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V 3V @ 250µA 60 nC @ 4.5 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI8439DB-T1-E1

SI8439DB-T1-E1

MOSFET P-CH 8V 4MICROFOOT

Vishay Siliconix
3,245 -

RFQ

SI8439DB-T1-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.9A (Ta) 1.2V, 4.5V 25mOhm @ 1.5A, 4.5V 800mV @ 250µA 50 nC @ 4.5 V ±5V - - 1.1W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA448DJ-T1-GE3

SIA448DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix
2,535 -

RFQ

SIA448DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.5V, 4.5V 15mOhm @ 12.4A, 4.5V 1V @ 250µA 35 nC @ 8 V ±8V 1380 pF @ 1 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3442CDV-T1-GE3

SI3442CDV-T1-GE3

MOSFET N-CH 20V 8A 6TSOP

Vishay Siliconix
3,119 -

RFQ

SI3442CDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 10V 27mOhm @ 6.5A, 10V 1.5V @ 250µA 14 nC @ 10 V ±12V 335 pF @ 10 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHS36N50D-E3

SIHS36N50D-E3

MOSFET N-CH 500V 36A SUPER-247

Vishay Siliconix
2,384 -

RFQ

SIHS36N50D-E3

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 18A, 10V 5V @ 250µA 125 nC @ 10 V ±30V 3233 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ174EP-T1_GE3

SQJ174EP-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix
3,086 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 293A (Tc) 10V 2.9mOhm @ 15A, 10V 3.5V @ 250µA 81 nC @ 10 V ±20V 6111 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA12EP-T1_GE3

SQJA12EP-T1_GE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Vishay Siliconix
2,257 -

RFQ

SQJA12EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V - 10V 8.6mOhm @ 10A, 10V 3V @ 250µA 49.1 nC @ 10 V - 3635 pF @ 25 V - - -55°C ~ 125°C -
SIR580DP-T1-RE3

SIR580DP-T1-RE3

N-CHANNEL 80-V (D-S) MOSFET

Vishay Siliconix
3,613 -

RFQ

SIR580DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 35.8A (Ta), 146A (Tc) 7.5V, 10V 2.7mOhm @ 20A, 10V 4V @ 250µA 76 nC @ 10 V ±20V 4100 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR5802DP-T1-RE3

SIR5802DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix
2,808 -

RFQ

SIR5802DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 33.6A (Ta), 137.5A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3020 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA18DN-T1-GE3

SISA18DN-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8

Vishay Siliconix
3,297 -

RFQ

SISA18DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 38.3A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.4V @ 250µA 21.5 nC @ 10 V +20V, -16V 1000 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR642DP-T1-GE3

SIR642DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,752 -

RFQ

SIR642DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.4mOhm @ 15A, 10V 2.3V @ 250µA 84 nC @ 10 V ±20V 4155 pF @ 20 V - 4.8W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3445ADV-T1-E3

SI3445ADV-T1-E3

MOSFET P-CH 8V 4.4A 6TSOP

Vishay Siliconix
3,829 -

RFQ

SI3445ADV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 8 V 4.4A (Ta) 1.8V, 4.5V 42mOhm @ 5.8A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3445DV-T1-E3

SI3445DV-T1-E3

MOSFET P-CH 8V 6TSOP

Vishay Siliconix
3,694 -

RFQ

SI3445DV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.6A (Ta) 1.8V, 4.5V 42mOhm @ 5.6A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±8V - - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR182LDP-T1-RE3

SIR182LDP-T1-RE3

N-CHANNEL 60-V (D-S) MOSFET POWE

Vishay Siliconix
3,425 -

RFQ

SIR182LDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 31.7A (Ta), 130A (Tc) 4.5V, 10V 2.75mOhm @ 15A, 10V 2.4V @ 250µA 84 nC @ 10 V ±20V 3700 pF @ 30 V - 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ180EP-T1_GE3

SQJ180EP-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
3,955 -

RFQ

SQJ180EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 248A (Tc) 10V 3mOhm @ 15A, 10V 3.5V @ 250µA 117 nC @ 10 V ±20V 6645 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ160EP-T1_GE3

SQJ160EP-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix
3,755 -

RFQ

SQJ160EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 362A (Tc) 10V 2mOhm @ 15A, 10V 3.5V @ 250µA 119 nC @ 10 V ±20V 6697 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR640DP-T1-GE3

SIR640DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,835 -

RFQ

SIR640DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.3V @ 250µA 113 nC @ 10 V ±20V 4930 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7860DP-T1-E3

SI7860DP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

Vishay Siliconix
2,077 -

RFQ

SI7860DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8mOhm @ 18A, 10V 3V @ 250µA 18 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SUD23N06-31L-E3

SUD23N06-31L-E3

MOSFET N-CH 60V TO252

Vishay Siliconix
3,878 -

RFQ

SUD23N06-31L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 25 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD35N05-26L-E3

SUD35N05-26L-E3

MOSFET N-CH 55V 35A TO252

Vishay Siliconix
3,160 -

RFQ

SUD35N05-26L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 20mOhm @ 20A, 10V 1V @ 250µA (Min) 13 nC @ 5 V ±20V 885 pF @ 25 V - 7.5W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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