Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHLU024-GE3

SIHLU024-GE3

LOGIC MOSFET N-CHANNEL 60V

Vishay Siliconix
2,252 -

RFQ

SIHLU024-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR582DP-T1-RE3

SIR582DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix
3,334 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 28.9A (Ta), 116A (Tc) 7.5V, 10V 3.4mOhm @ 15A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 3360 pF @ 40 V - 5.6W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ136ELP-T1_GE3

SQJ136ELP-T1_GE3

MOSFET N-CH 40V 350A PPAK SO-8

Vishay Siliconix
2,785 -

RFQ

SQJ136ELP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 350A (Tc) - 1.12mOhm @ 15A, 10V 2.2V @ 250µA 150 nC @ 10 V ±20V 8015 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS5710DN-T1-GE3

SISS5710DN-T1-GE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
3,337 -

RFQ

SISS5710DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 7.2A (Ta), 26.2A (Tc) 7.5V, 10V 31.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 770 pF @ 75 V - 4.1W (Ta), 54.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ126EP-T1_GE3

SQJ126EP-T1_GE3

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Vishay Siliconix
3,013 -

RFQ

SQJ126EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 500A (Tc) 10V 0.94mOhm @ 15A, 10V 3.5V @ 250µA 152 nC @ 10 V ±20V 8095 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR392DP-T1-RE3

SIDR392DP-T1-RE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
2,186 -

RFQ

SIDR392DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 82A (Ta), 100A (Tc) 4.5V, 10V 0.62mOhm @ 20A, 10V 2.2V @ 250µA 188 nC @ 10 V +20V, -16V 9530 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFBC40AS-GE3

SIHFBC40AS-GE3

MOSFET N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHFBC40AS-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI6423DQ-T1-BE3

SI6423DQ-T1-BE3

P-CHANNEL 12-V (D-S) MOSFET

Vishay Siliconix
2,584 -

RFQ

SI6423DQ-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 8.2A (Ta) 1.8V, 4.5V 8.5mOhm @ 9.5A, 4.5V 800mV @ 400µA 110 nC @ 5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHD11N80AE-T1-GE3

SIHD11N80AE-T1-GE3

N-CHANNEL 800V

Vishay Siliconix
2,893 -

RFQ

SIHD11N80AE-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD11N80AE-T4-GE3

SIHD11N80AE-T4-GE3

N-CHANNEL 800V

Vishay Siliconix
3,833 -

RFQ

SIHD11N80AE-T4-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS5708DN-T1-GE3

SISS5708DN-T1-GE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
2,487 -

RFQ

SISS5708DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 9.3A (Ta), 33.8A (Tc) 7.5V, 10V 23mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 975 pF @ 75 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF9Z34STRL-GE3

SIHF9Z34STRL-GE3

MOSFET P-CHANNEL 60V

Vishay Siliconix
3,238 -

RFQ

SIHF9Z34STRL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR516DP-T1-RE3

SIR516DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
3,125 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16.8A (Ta), 63.7A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1920 pF @ 50 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFBE30S-GE3

SIHFBE30S-GE3

MOSFET N-CHANNEL 800V

Vishay Siliconix
2,837 -

RFQ

SIHFBE30S-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI6415DQ-T1-BE3

SI6415DQ-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
3,014 -

RFQ

SI6415DQ-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 19mOhm @ 6.5A, 10V 1V @ 250µA 70 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR812DP-T1-GE3

SIR812DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
3,215 -

RFQ

SIR812DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.45mOhm @ 20A, 10V 2.3V @ 250µA 335 nC @ 10 V ±20V 10240 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7848BDP-T1-E3

SI7848BDP-T1-E3

MOSFET N-CH 40V 47A PPAK SO-8

Vishay Siliconix
2,249 -

RFQ

SI7848BDP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 20 V - 4.2W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA26EP-T1_GE3

SQJA26EP-T1_GE3

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Vishay Siliconix
3,330 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 410A (Tc) 4.5V, 10V 0.77mOhm @ 15A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 9778 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI8416DB-T1-GE3

SI8416DB-T1-GE3

MOSFET N-CH 8V 16A 6MICROFOOT

Vishay Siliconix
3,366 -

RFQ

SI8416DB-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 8 V 16A (Tc) 1.2V, 4.5V 23mOhm @ 1.5A, 4.5V 800mV @ 250µA 26 nC @ 4.5 V ±5V 1470 pF @ 4 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA418DJ-T1-GE3

SIA418DJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix
3,047 -

RFQ

SIA418DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 18mOhm @ 9A, 10V 2.4V @ 250µA 17 nC @ 10 V ±20V 570 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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