Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ1470EH-T1-GE3

SQ1470EH-T1-GE3

MOSFET N-CH 30V 2.8A SC70

Vishay Siliconix
3,508 -

RFQ

SQ1470EH-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.8A (Tc) - 65mOhm @ 3.8A, 4.5V 1.6V @ 250µA 6.6 nC @ 4.5 V - 610 pF @ 25 V - - - Surface Mount
SQ2360EES-T1-GE3

SQ2360EES-T1-GE3

MOSFET N-CH 60V 4.4A TO236

Vishay Siliconix
2,598 -

RFQ

SQ2360EES-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 4.4A (Tc) - 85mOhm @ 6A, 10V 2.5V @ 250µA 12 nC @ 10 V - 370 pF @ 25 V - - - Surface Mount
SQ3442EV-T1-GE3

SQ3442EV-T1-GE3

MOSFET N-CH 20V 4.3A 6TSOP

Vishay Siliconix
2,464 -

RFQ

SQ3442EV-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.3A (Tc) - 55mOhm @ 4A, 4.5V 1.6V @ 250µA 5.5 nC @ 4.5 V - 405 pF @ 10 V - - - Surface Mount
SQJ403BEEP-T1_BE3

SQJ403BEEP-T1_BE3

P-CHANNEL 30-V (D-S) 175C MOSFET

Vishay Siliconix
2,550 -

RFQ

SQJ403BEEP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 164 nC @ 10 V ±20V - - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA20BDP-T1-GE3

SIRA20BDP-T1-GE3

MOSFET N-CH 25V 82A/335A PPAK

Vishay Siliconix
2,547 -

RFQ

SIRA20BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 82A (Ta), 335A (Tc) - 0.58mOhm @ 20A, 10V 2.1V @ 250µA 186 nC @ 10 V +16V, -12V 9950 pF @ 15 V - 6.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR574DP-T1-RE3

SIR574DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
2,734 -

RFQ

SIR574DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 150 V 12.1A (Ta), 48.1A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 2300 pF @ 75 V - 5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD50P06-15L_T4GE3

SQD50P06-15L_T4GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
2,031 -

RFQ

SQD50P06-15L_T4GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15.5mOhm @ 17A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 5910 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4840BDY-T1-E3

SI4840BDY-T1-E3

MOSFET N-CH 40V 19A 8SO

Vishay Siliconix
2,655 -

RFQ

SI4840BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Tc) 4.5V, 10V 9mOhm @ 12.4A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 20 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR878ADP-T1-GE3

SIR878ADP-T1-GE3

MOSFET N-CH 100V 40A PPAK SO-8

Vishay Siliconix
2,525 -

RFQ

SIR878ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 14mOhm @ 15A, 10V 2.8V @ 250µA 42 nC @ 10 V ±20V 1275 pF @ 50 V - 5W (Ta), 44.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ422EP-T1_BE3

SQJ422EP-T1_BE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
2,298 -

RFQ

SQJ422EP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 3.4mOhm @ 18A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 4660 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS160ELNW-T1_GE3

SQS160ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix
3,657 -

RFQ

SQS160ELNW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 141A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.5V @ 250µA 71 nC @ 10 V ±20V 3866 pF @ 25 V - 113W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIR584DP-T1-RE3

SIR584DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET POWE

Vishay Siliconix
2,139 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 24.7A (Ta), 100A (Tc) 7.5V, 10V 3.9mOhm @ 15A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2800 pF @ 40 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ402EP-T1_BE3

SQJ402EP-T1_BE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Vishay Siliconix
2,350 -

RFQ

SQJ402EP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 4.5V, 10V 11mOhm @ 10.7A, 10V 2.5V @ 250µA 51 nC @ 10 V ±20V 2286 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI9410BDY-T1-E3

SI9410BDY-T1-E3

MOSFET N-CH 30V 6.2A 8SO

Vishay Siliconix
2,079 -

RFQ

SI9410BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.2A (Ta) 4.5V, 10V 24mOhm @ 8.1A, 10V 3V @ 250µA 23 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9310TRLPBF-BE3

IRFR9310TRLPBF-BE3

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
3,622 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA16EP-T1_GE3

SQJA16EP-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix
3,906 -

RFQ

SQJA16EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 278A (Tc) 4.5V, 10V 3mOhm @ 15A, 10V 2.5V @ 250µA 84 nC @ 10 V ±20V 5485 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ123ELP-T1_GE3

SQJ123ELP-T1_GE3

AUTOMOTIVE P-CHANNEL 12 V (D-S)

Vishay Siliconix
2,106 -

RFQ

SQJ123ELP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 238A (Tc) 1.8V, 4.5V 4mOhm @ 10A, 4.5V 1.5V @ 250µA 180 nC @ 4.5 V ±8V 11680 pF @ 6 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ182EP-T1_GE3

SQJ182EP-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
3,666 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 210A (Tc) 10V 5mOhm @ 15A, 10V 3.5V @ 250µA 96 nC @ 10 V ±20V 5392 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS184LDN-T1-GE3

SIS184LDN-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix
3,093 -

RFQ

SIS184LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta), 69.4A (Tc) 4.5V, 10V 5.4mOhm @ 10A, 10V 3V @ 250µA 41 nC @ 10 V ±20V 1950 pF @ 30 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ431AEP-T1_BE3

SQJ431AEP-T1_BE3

P-CHANNEL 200-V (D-S) 175C MOSFE

Vishay Siliconix
3,382 -

RFQ

SQJ431AEP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 6V, 10V 305mOhm @ 3.8A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 3700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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