Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM12N650LD

RM12N650LD

MOSFET N-CH 650V 11.5A TO252-2

Rectron USA
2,062 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM12N650IP

RM12N650IP

MOSFET N-CH 650V 11.5A TO251

Rectron USA
3,440 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM80N60DF

RM80N60DF

MOSFET N-CHANNEL 60V 80A 8DFN

Rectron USA
2,792 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 4mOhm @ 40A, 10V 2.4V @ 250µA - ±20V 4000 pF @ 30 V - 85W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM7N600IP

RM7N600IP

MOSFET N-CHANNEL 600V 7A TO251

Rectron USA
2,210 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 580mOhm @ 3A, 10V 4V @ 250µA - ±30V 587 pF @ 50 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM80N100AT2

RM80N100AT2

MOSFET N-CH 100V 80A TO220-3

Rectron USA
2,675 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 4V @ 250A - ±20V 5480 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM120N60T2

RM120N60T2

MOSFET N-CH 60V 120A TO220-3

Rectron USA
2,743 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 4mOhm @ 60A, 10V 2.4V @ 250µA - ±20V 4000 pF @ 30 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM150N40DF

RM150N40DF

MOSFET N-CHANNEL 40V 150A 8DFN

Rectron USA
3,034 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.8mOhm @ 75A, 10V 2.2V @ 250µA - ±20V 7150 pF @ 20 V - 88W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM50N60DF

RM50N60DF

MOSFET N-CHANNEL 60V 50A 8DFN

Rectron USA
3,409 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 1.8V @ 250µA - ±20V 4000 pF @ 30 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM110N85T2

RM110N85T2

MOSFET N-CH 85V 110A TO220-3

Rectron USA
2,628 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 85 V 110A (Tc) 10V 6mOhm @ 55A, 10V 4.5V @ 250µA - ±20V 3870 pF @ 40 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM150N60T2

RM150N60T2

MOSFET N-CH 60V 150A TO220-3

Rectron USA
2,624 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA - ±20V 6500 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM7N600LD

RM7N600LD

MOSFET N-CHANNEL 600V 7A TO252-2

Rectron USA
3,236 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 580mOhm @ 3A, 10V 4V @ 250µA - ±30V 587 pF @ 50 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM50N150DF

RM50N150DF

MOSFET N-CHANNEL 150V 50A 8DFN

Rectron USA
3,288 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 10V 19mOhm @ 30A, 10V 4.5V @ 250µA - ±20V 5200 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM100N65DF

RM100N65DF

MOSFET N-CHANNEL 65V 100A 8DFN

Rectron USA
2,135 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 65 V 100A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.5V @ 250µA - +20V, -12V 9500 pF @ 25 V - 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM052N100DF

RM052N100DF

MOSFET N-CHANNEL 100V 70A 8DFN

Rectron USA
2,651 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA - +20V, -12V 9100 pF @ 25 V - 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM5N800HD

RM5N800HD

MOSFET N-CHANNEL 800V 5A TO263-2

Rectron USA
2,554 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2A, 10V 4.5V @ 250µA - ±30V 1320 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM12N650T2

RM12N650T2

MOSFET N-CH 650V 11.5A TO220-3

Rectron USA
3,824 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM150N60HD

RM150N60HD

MOSFET N-CH 60V 150A TO263-2

Rectron USA
3,460 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA - ±20V 6500 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM5N800TI

RM5N800TI

MOSFET N-CHANNEL 800V 5A TO220F

Rectron USA
3,825 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2A, 10V 4.5V @ 250µA - ±30V 1320 pF @ 50 V - 32.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM12N650TI

RM12N650TI

MOSFET N-CH 650V 11.5A TO220F

Rectron USA
2,745 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 32.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM5N800T2

RM5N800T2

MOSFET N-CHANNEL 800V 5A TO220-3

Rectron USA
2,251 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2A, 10V 4.5V @ 250µA - ±30V 1320 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 232 Record«Prev1... 56789101112Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario