Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM210N75HD

RM210N75HD

MOSFET N-CH 75V 210A TO263-2

Rectron USA
3,932 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 75 V 210A (Tc) 10V 4mOhm @ 40A, 10V 4V @ 250µA - ±20V 11000 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM15N650T2

RM15N650T2

MOSFET N-CH 650V 15A TO220-3

Rectron USA
2,818 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 8A, 10V 3.5V @ 250µA - ±30V 1360 pF @ 50 V - 145W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM135N100HD

RM135N100HD

MOSFET N-CH 100V 135A TO263-2

Rectron USA
2,233 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 135A (Tc) 10V 4.6mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 6400 pF @ 50 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM150N100HD

RM150N100HD

MOSFET N-CH 100V 150A TO263-2

Rectron USA
3,493 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 4.2mOhm @ 70A, 10V 4V @ 250µA - +20V, -12V 6680 pF @ 50 V - 275W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM135N100T2

RM135N100T2

MOSFET N-CH 100V 135A TO220-3

Rectron USA
3,211 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 135A (Tc) 10V 4.5mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 7500 pF @ 50 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM20N650TI

RM20N650TI

MOSFET N-CHANNEL 650V 20A TO220F

Rectron USA
3,877 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5V @ 250µA - ±30V 2600 pF @ 50 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM20N650T2

RM20N650T2

MOSFET N-CH 650V 20A TO220-3

Rectron USA
2,145 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5V @ 250µA - ±30V 2600 pF @ 50 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM20N650HD

RM20N650HD

MOSFET N-CH 650V 20A TO263-2

Rectron USA
3,096 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5V @ 250µA - ±30V 2600 pF @ 50 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM30N250DF

RM30N250DF

MOSFET N-CHANNEL 250V 29A 8DFN

Rectron USA
2,153 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 29A (Tc) 10V 64mOhm @ 10A, 10V 4V @ 250µA - ±20V 1584 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM50N200HD

RM50N200HD

MOSFET N-CH 200V 51A TO263-2

Rectron USA
3,952 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 51A (Tc) 10V 32mOhm @ 10A, 10V 4V @ 250µA - ±20V 1598 pF @ 100 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM50N200T2

RM50N200T2

MOSFET N-CH 200V 51A TO220-3

Rectron USA
2,032 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 51A (Tc) 10V 32mOhm @ 10A, 10V 4V @ 250µA - ±20V 1598 pF @ 100 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM42N200DF

RM42N200DF

MOSFET N-CHANNEL 200V 42A 8DFN

Rectron USA
3,520 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 42A (Tc) 10V 32mOhm @ 10A, 10V 4V @ 250µA - ±20V 1598 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM21N650TI

RM21N650TI

MOSFET N-CHANNEL 650V 21A TO220F

Rectron USA
2,246 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 10.5A, 10V 4V @ 250µA - ±30V 2600 pF @ 50 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM21N650T2

RM21N650T2

MOSFET N-CH 650V 21A TO220-3

Rectron USA
2,422 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 10.5A, 10V 4V @ 250µA - ±30V 2600 pF @ 50 V - 188W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM21N700T2

RM21N700T2

MOSFET N-CH 700V 21A TO220-3

Rectron USA
2,287 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM21N700TI

RM21N700TI

MOSFET N-CHANNEL 700V 21A TO220F

Rectron USA
3,638 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 21A (Tc) 10V 190mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM110N150HD

RM110N150HD

MOSFET N-CH 150V 113A TO263-2

Rectron USA
3,005 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 113A (Tc) 10V 8.8mOhm @ 20A, 10V 4V @ 250µA - ±20V 4362 pF @ 75 V - 273W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM11N800T2

RM11N800T2

MOSFET N-CH 800V 11A TO220-3

Rectron USA
3,471 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 420mOhm @ 5.5A, 10V 4V @ 250µA - ±30V 2600 pF @ 50 V - 188W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM11N800TI

RM11N800TI

MOSFET N-CHANNEL 800V 11A TO220F

Rectron USA
2,342 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) 10V 420mOhm @ 5.5A, 10V 4V @ 250µA - ±30V 2600 pF @ 50 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM140N150T2

RM140N150T2

MOSFET N-CH 150V 140A TO220-3

Rectron USA
3,002 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 140A (Tc) 10V 6.2mOhm @ 70A, 10V 4V @ 250µA - ±20V 5900 pF @ 75 V - 320W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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