Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM4N650T2

RM4N650T2

MOSFET N-CHANNEL 650V 4A TO220-3

Rectron USA
2,226 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 280 pF @ 50 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM115N65T2

RM115N65T2

MOSFET N-CH 65V 115A TO220-3

Rectron USA
3,814 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 65 V 115A (Tc) 4.5V, 10V 4.7mOhm @ 15A, 10V 2.5V @ 250µA - +20V, -12V 5900 pF @ 30 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N700IP

RM8N700IP

MOSFET N-CHANNEL 700V 8A TO251

Rectron USA
2,677 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA - ±30V 590 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM5N700IP

RM5N700IP

MOSFET N-CHANNEL 700V 5A TO251

Rectron USA
2,121 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N700LD

RM8N700LD

MOSFET N-CHANNEL 700V 8A TO252-2

Rectron USA
2,575 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA - ±30V 590 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM5N700LD

RM5N700LD

MOSFET N-CHANNEL 700V 5A TO252-2

Rectron USA
2,511 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 700 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM35P100T2

RM35P100T2

MOSFET P-CH 100V 35A TO220-3

Rectron USA
2,829 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 50mOhm @ 10A, 10V 2.5V @ 250µA - ±20V 6516 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM60N100DF

RM60N100DF

MOSFET N-CHANNEL 100V 60A 8DFN

Rectron USA
2,234 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 8.5mOhm @ 30A, 10V 4.5V @ 250µA - ±20V 3500 pF @ 50 V - 105W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM80N100T2

RM80N100T2

MOSFET N-CH 100V 80A TO220-3

Rectron USA
3,319 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 2.2V @ 250µA - ±20V 5480 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM120N40T2

RM120N40T2

MOSFET N-CH 40V 120A TO220-3

Rectron USA
3,931 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA - ±20V 5400 pF @ 20 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM8N650T2

RM8N650T2

MOSFET N-CHANNEL 650V 8A TO220-3

Rectron USA
2,740 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N650LD

RM8N650LD

MOSFET N-CHANNEL 650V 8A TO252-2

Rectron USA
3,007 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 540mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM8N650TI

RM8N650TI

MOSFET N-CHANNEL 650V 8A TO220F

Rectron USA
2,815 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tj) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 31.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N650IP

RM8N650IP

MOSFET N-CHANNEL 650V 8A TO251

Rectron USA
3,056 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 540mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM80N80T2

RM80N80T2

MOSFET N-CHANNEL 80V 80A TO220-3

Rectron USA
2,833 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Ta) 10V 8.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4100 pF @ 25 V - 170W (Ta) -55°C ~ 175°C (TJ) Through Hole
RM8N650HD

RM8N650HD

MOSFET N-CHANNEL 650V 8A TO263-2

Rectron USA
2,998 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM80N80HD

RM80N80HD

MOSFET N-CHANNEL 80V 80A TO263-2

Rectron USA
2,491 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Ta) 10V 8.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4400 pF @ 25 V - 170W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RM120N85T2

RM120N85T2

MOSFET N-CH 85V 120A TO220-3

Rectron USA
2,919 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 85 V 120A (Tc) 10V 5.3mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 5500 pF @ 40 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM60P60HD

RM60P60HD

MOSFET P-CHANNEL 60V 61A TO263-2

Rectron USA
3,796 -

RFQ

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 61A (Ta) 6V, 10V 22mOhm @ 15A, 10V 4V @ 250µA - ±20V 3200 pF @ 25 V - 171W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RM140N82T2

RM140N82T2

MOSFET N-CH 82V 140A TO220-3

Rectron USA
2,290 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 82 V 140A (Tc) 10V 6mOhm @ 20A, 10V 4V @ 250µA - ±20V 7900 pF @ 40 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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