Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM180N100T2

RM180N100T2

MOSFET N-CH 100V 180A TO220-3

Rectron USA
3,117 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA - ±20V 1150 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM17N800TI

RM17N800TI

MOSFET N-CHANNEL 800V 17A TO220F

Rectron USA
2,580 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800T2

RM17N800T2

MOSFET N-CH 800V 17A TO220-3

Rectron USA
3,549 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800HD

RM17N800HD

MOSFET N-CH 800V 17A TO263-2

Rectron USA
2,004 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM21N650T7

RM21N650T7

MOSFET N-CHANNEL 650V 21A TO247

Rectron USA
2,977 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM150N150HD

RM150N150HD

MOSFET N-CH 150V 150A TO263-2

Rectron USA
2,906 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 7.2mOhm @ 70A, 10V 4V @ 250µA - ±20V 5500 pF @ 75 V - 320W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM45N600T7

RM45N600T7

MOSFET N-CH 600V 44.5A TO247

Rectron USA
2,208 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 44.5A (Tj) 10V 90mOhm @ 15.6A, 10V 4V @ 250µA - ±30V 2808 pF @ 100 V - 431W -55°C ~ 150°C (TJ) Through Hole
RM47N600T7

RM47N600T7

MOSFET N-CHANNEL 600V 47A TO247

Rectron USA
2,032 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tj) 10V 81mOhm @ 15.6A, 10V 4V @ 250µA - ±20V 3111.9 pF @ 25 V - 417W -55°C ~ 150°C (TJ) Through Hole
RM47N650T7

RM47N650T7

MOSFET N-CHANNEL 650V 47A TO247

Rectron USA
2,414 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tj) 10V 81mOhm @ 15.6A, 10V 4V @ 250µA - ±20V 3111.9 pF @ 25 V - 417W -55°C ~ 150°C (TJ) Through Hole
RM130N200T2

RM130N200T2

MOSFET N-CH 200V 132A TO220-3

Rectron USA
2,269 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 11mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM130N200HD

RM130N200HD

MOSFET N-CH 200V 132A TO263-2

Rectron USA
2,254 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 10.7mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM130N200T7

RM130N200T7

MOSFET N-CHANNEL 200V 132A TO247

Rectron USA
2,809 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 10.9mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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