Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM8N700TI

RM8N700TI

MOSFET N-CHANNEL 700V 8A TO220F

Rectron USA
3,405 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tj) 10V 600mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 31.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM100N60T7

RM100N60T7

MOSFET N-CHANNEL 60V 100A TO247

Rectron USA
2,886 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4800 pF @ 30 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM8N700T2

RM8N700T2

MOSFET N-CHANNEL 700V 8A TO220-3

Rectron USA
2,212 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM130N100T2

RM130N100T2

MOSFET N-CH 100V 130A TO220-3

Rectron USA
3,532 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 5.5mOhm @ 50A, 10V 4V @ 250µA - ±20V 4570 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM5N800LD

RM5N800LD

MOSFET N-CHANNEL 800V 5A TO252-2

Rectron USA
2,616 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 81W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM170N30DF

RM170N30DF

MOSFET N-CHANNEL 30V 170A 8DFN

Rectron USA
2,484 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 170A (Tc) 4.5V, 10V 1.65mOhm @ 85A, 10V 2V @ 250µA - ±20V 7300 pF @ 15 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM5N800IP

RM5N800IP

MOSFET N-CHANNEL 800V 5A TO251

Rectron USA
2,572 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 81W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM6N800LD

RM6N800LD

MOSFET N-CHANNEL 800V 6A TO252-2

Rectron USA
3,187 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 4A, 10V 4V @ 250µA - ±30V 1290 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM130N100HD

RM130N100HD

MOSFET N-CH 100V 130A TO263-2

Rectron USA
2,076 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 5.5mOhm @ 50A, 10V 4V @ 250µA - ±20V 4570 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM6N800IP

RM6N800IP

MOSFET N-CHANNEL 800V 6A TO251

Rectron USA
2,817 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 4A, 10V 4V @ 250µA - ±30V 1290 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM180N60T2

RM180N60T2

MOSFET N-CH 60V 180A TO220-3

Rectron USA
3,128 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 2.9mOhm @ 20A, 10V 4V @ 250µA - ±20V 4500 pF @ 30 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM185N30DF

RM185N30DF

MOSFET N-CHANNEL 30V 185A 8DFN

Rectron USA
2,833 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 185A (Tc) 4.5V, 10V 1.4mOhm @ 95A, 10V 2V @ 250µA - ±20V 8800 pF @ 15 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM40N200TI

RM40N200TI

MOSFET N-CHANNEL 200V 40A TO220F

Rectron USA
2,852 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 41mOhm @ 20A, 10V 4V @ 250µA - ±20V 6500 pF @ 25 V - 60W (Ta) -55°C ~ 175°C (TJ) Through Hole
RM6N800HD

RM6N800HD

MOSFET N-CHANNEL 800V 6A TO263-2

Rectron USA
3,805 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 4A, 10V 4V @ 250µA - ±30V 1320 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM150N100ADF

RM150N100ADF

MOSFET N-CHANNEL 100V 128A 8DFN

Rectron USA
2,221 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.2mOhm @ 20A, 10V 2.4V @ 250µA - ±20V 3650 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM6N800TI

RM6N800TI

MOSFET N-CHANNEL 800V 6A TO220F

Rectron USA
2,093 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tj) 10V 900mOhm @ 4A, 10V 4V @ 250µA - ±30V 1320 pF @ 50 V - 32.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM6N800T2

RM6N800T2

MOSFET N-CHANNEL 800V 6A TO220-3

Rectron USA
3,706 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 4A, 10V 4V @ 250µA - ±30V 1320 pF @ 50 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM150N100T2

RM150N100T2

MOSFET N-CH 100V 150A TO220-3

Rectron USA
3,335 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 4.2mOhm @ 70A, 10V 4V @ 250µA - +20V, -12V 6680 pF @ 50 V - 275W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM80N150T2

RM80N150T2

MOSFET N-CH 150V 80A TO220-3

Rectron USA
2,200 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 80A (Tc) 10V 12.5mOhm @ 40A, 10V 4.5V @ 250µA - ±20V 3200 pF @ 75 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM15N650TI

RM15N650TI

MOSFET N-CHANNEL 650V 15A TO220F

Rectron USA
2,281 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 8A, 10V 3.5V @ 250µA - ±30V 1360 pF @ 50 V - 33.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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