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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSL316CL6327P-CHANNEL MOSFET Infineon Technologies |
3,961 | - |
RFQ |
Ficha técnica |
Bulk | OptiMOS™ | Active | N and P-Channel | Logic Level Gate | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSL806NL6327SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
3,103 | - |
RFQ |
Ficha técnica |
Bulk | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSL215PL6327P-CHANNEL MOSFET Infineon Technologies |
3,631 | - |
RFQ |
Ficha técnica |
Bulk | OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.55nC @ 4.5V | 346pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSO303PP-CHANNEL POWER MOSFET Infineon Technologies |
2,844 | - |
RFQ |
Ficha técnica |
Bulk | OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8.2A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 72.5nC @ 10V | 1761pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPG20N04S409AATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
3,502 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | 2250pF @ 25V | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N06S2L-35AATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
2,218 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
BSZ105N04NSGOPTLMOS POWER-MOSFET Infineon Technologies |
2,851 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPP60R280E6COOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,612 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPI60R199CPCOOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
2,648 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IPP60R380E6COOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,822 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPI60R165CPCOOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,800 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPA60R280E6600V 0.28OHM N-CHANNEL MOSFET Infineon Technologies |
2,902 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
AUIRFS4410ZTRL-INFAUTOMOTIVE HEXFET N CHANNEL Infineon Technologies |
3,108 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPL60R385CPCOOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,812 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRFI4212H-117PXKMA1MOSFET 2N-CH 100V 11A TO220-5 Infineon Technologies |
2,218 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 100V | 11A (Tc) | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFI4019H-117PXKMA1MOSFET 2N-CH 150V 8.7A TO220-5 Infineon Technologies |
3,872 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 150V | 8.7A (Tc) | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFI4020H-117PXKMA1MOSFET 2N-CH 200V 9.1A TO-220 Infineon Technologies |
2,630 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 200V | 9.1A (Tc) | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1240pF @ 25V | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
FF11MR12W1M1B70BPSA1LOW POWER EASY AG-EASY1B-2 Infineon Technologies |
3,971 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™+ | Obsolete | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FS03MR12A6MA1BBPSA1HYBRID PACK DRIVE SIC AG-HYBRIDD Infineon Technologies |
3,538 | - |
RFQ |
Ficha técnica |
Tray | HybridPACK™ | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
IRF7501TRPBFMOSFET 2N-CH 20V 2.4A MICRO8 Infineon Technologies |
2,778 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
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