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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7342TRPBFMOSFET 2P-CH 55V 3.4A 8-SOIC Infineon Technologies |
2,703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSZ15DC02KDHXTMA1MOSFET N/P-CH 20V 5.1/3.2A TDSON Infineon Technologies |
3,272 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, HEXFET® | Active | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount |
|
IAUC60N04S6L045HATMA1IAUC60N04S6L045HATMA1 Infineon Technologies |
2,507 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 60A (Tj) | 4.5mOhm @ 30A, 10V | 2V @ 13µA | 19nC @ 10V | 1136pF @ 25V | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N04S4L08ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
2,434 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N06S4L11ATMA2MOSFET_)40V 60V) Infineon Technologies |
3,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A (Tc) | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
|
IRF7351TRPBFMOSFET 2N-CH 60V 8A 8-SOIC Infineon Technologies |
3,235 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPG20N04S408ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
3,288 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
AUIRF7341QTRMOSFET 2N-CH 55V 5.1A 8SOIC Infineon Technologies |
3,928 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF8313TRPBFMOSFET 2N-CH 30V 9.7A 8SO Infineon Technologies |
3,383 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | 2W | -55°C ~ 175°C (TJ) | Surface Mount |
|
AUIRFN8459TRMOSFET 2N-CH 40V 50A 8PQFN Infineon Technologies |
3,328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | HEXFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 50A | 5.9mOhm @ 40A, 10V | 3.9V @ 50µA | 60nC @ 10V | 2250pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N06S2L65ATMA1MOSFET 2N-CH 55V 20A TDSON-8-4 Infineon Technologies |
3,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | 410pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount |
|
FF8MR12W2M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY2BM-2 Infineon Technologies |
2,017 | - |
RFQ |
Ficha técnica |
Bulk,Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 7.5mOhm @ 150A, 15V (Typ) | 5.55V @ 60mA | 372nC @ 15V | 11000pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FF6MR12W2M1B11BOMA1MOSFET MODULE 1200V 200A Infineon Technologies |
2,362 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSD223PH6327XTSA1MOSFET 2P-CH 20V 0.39A SOT363 Infineon Technologies |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSD235NH6327XTSA1MOSFET 2N-CH 20V 0.95A SOT363 Infineon Technologies |
2,901 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ 2 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.32nC @ 4.5V | 63pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSL316CH6327XTSA1MOSFET N/P-CH 30V 1.4A/1.5A TSOP Infineon Technologies |
3,072 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 282pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSL308PEH6327XTSA1MOSFET 2P-CH 30V 2A 6TSOP Infineon Technologies |
2,758 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSL308CH6327XTSA1MOSFET N/P-CH 30V 2.3A/2A 6TSOP Infineon Technologies |
2,115 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 2.3A, 2A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRL6372TRPBFMOSFET 2N-CH 30V 8.1A 8SOIC Infineon Technologies |
3,235 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC0925NDATMA1MOSFET 2N-CH 30V 15A TISON8 Infineon Technologies |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N Channel (Dual Buck Chopper) | Standard | 30V | 15A | 5mOhm @ 20A, 10V | 2V @ 250µA | 17nC @ 10V | 1157pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
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