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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSG0813NDIATMA1MOSFET 2N-CH 25V 19A/33A TISON8 Infineon Technologies |
2,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | - | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 33A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | 2.5W | -55°C ~ 155°C (TJ) | Surface Mount |
|
IRFH7911TRPBFMOSFET 2N-CH 30V 13A/28A PQFN Infineon Technologies |
3,219 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | HEXFET® | Last Time Buy | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1060pF @ 15V | 2.4W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFH4251DTRPBFMOSFET 2N-CH 25V 64A/188A PQFN Infineon Technologies |
2,962 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | FASTIRFET™ | Not For New Designs | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 63W | -55°C ~ 150°C (TJ) | Surface Mount |
|
FF45MR12W1M1PB11BPSA1LOW POWER EASY AG-EASY1BM-2 Infineon Technologies |
2,803 | - |
RFQ |
Tray | CoolSiC™ | Not For New Designs | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
DF11MR12W1M1PB11BPSA1MOSFET MODULE 1200V Infineon Technologies |
3,528 | - |
RFQ |
Ficha técnica |
Tray | EasyPACK™ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FS05MR12A6MA1BBPSA1HYBRID PACK DRIVE SIC AG-HYBRIDD Infineon Technologies |
3,926 | - |
RFQ |
Tray | HybridPACK™ | Active | - | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A | - | - | - | - | - | - | Chassis Mount | |
|
|
FS03MR12A6MA1LBBPSA1HYBRID PACK DRIVE SIC AG-HYBRIDD Infineon Technologies |
2,888 | - |
RFQ |
Ficha técnica |
Tray | HybridPACK™ | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSO612CVGBSO612 - 20V-60V COMPLEMENTARY M Infineon Technologies |
2,403 | - |
RFQ |
Ficha técnica |
Bulk | SIPMOS® | Active | N and P-Channel | Standard | 60V | 3A (Ta), 2A (Ta) | 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V | 4V @ 20µA, 4V @ 450µA | 15.5nC @ 10V, 16nC @ 10V | 340pF, 400pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ITD50N04S4L07ATMA1ITD50N04 - 20V-40V N-CHANNEL AUT Infineon Technologies |
2,879 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BSO150N03MDGBSO150N03 - 12V-300V N-CHANNEL P Infineon Technologies |
3,996 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPG16N10S4-61IPG16N10 - 75V-100V N-CHANNEL AU Infineon Technologies |
3,134 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IRF9952MOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,885 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9953MOSFET 2P-CH 30V 2.3A 8-SOIC Infineon Technologies |
2,549 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9956MOSFET 2N-CH 30V 3.5A 8-SOIC Infineon Technologies |
3,091 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7501TRMOSFET 2N-CH 20V 2.4A MICRO8 Infineon Technologies |
3,806 | - |
RFQ |
Ficha técnica |
Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | - | Surface Mount |
|
|
IRF6156MOSFET 2N-CH 20V 6.5A FLIP-FET Infineon Technologies |
3,644 | - |
RFQ |
Ficha técnica |
Bulk | - | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.5A | 40mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 18nC @ 5V | 950pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO615CGHUMA1MOSFET N/P-CH 60V 3.1A/2A 8SOIC Infineon Technologies |
3,581 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | SIPMOS® | Obsolete | N and P-Channel | Logic Level Gate | 60V | 3.1A, 2A | 110mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO615NMOSFET 2N-CH 60V 2.6A 8SOIC Infineon Technologies |
2,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7106MOSFET N/P-CH 20V 3A/2.5A 8-SOIC Infineon Technologies |
2,890 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | N and P-Channel | Standard | 20V | 3A, 2.5A | 125mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | 300pF @ 15V | 2W | - | Surface Mount |
|
|
IRF7102MOSFET 2N-CH 50V 2A 8-SOIC Infineon Technologies |
2,167 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | 2 N-Channel (Dual) | Standard | 50V | 2A | 300mOhm @ 1.5A, 10V | 3V @ 250µA | 6.6nC @ 10V | 120pF @ 25V | 2W | - | Surface Mount |
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