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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7904TRPBFMOSFET 2N-CH 30V 7.6A/11A 8-SOIC Infineon Technologies |
2,947 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IAUC45N04S6N070HATMA1IAUC45N04S6N070HATMA1 Infineon Technologies |
2,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Half Bridge) | Standard | 40V | 45A (Tj) | 7mOhm @ 22A, 10V | 3V @ 9µA | 12nC @ 10V | 701pF @ 25V | 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N10S4L22ATMA1MOSFET 2N-CH 8TDSON Infineon Technologies |
3,703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC155N06NDATMA1TRENCH 40<-<100V Infineon Technologies |
2,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-T2 | Active | 2 N-Channel (Dual) | Standard | 60V | 20A (Tc) | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2250pF @ 30V | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC072N04LDATMA1TRENCH <= 40V Infineon Technologies |
2,650 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-T2 | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A (Tc) | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 52nC @ 10V | 3990pF @ 20V | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPG20N06S2L35AATMA1MOSFET 2N-CH 55V 2A 8TDSON Infineon Technologies |
2,279 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A (Tc) | 35mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | 790pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
|
AUIRF7313QTRMOSFET 2N-CH 30V 6.9A 8SO Infineon Technologies |
3,707 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
AUIRF7343QTRMOSFET 55V 4.7A/3.4A 8SO Infineon Technologies |
3,950 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | HEXFET® | Active | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
FF11MR12W1M1PB11BPSA1MOSFET MODULE 1200V DUAL Infineon Technologies |
3,537 | - |
RFQ |
Ficha técnica |
Tray | EasyDUAL™ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FF08MR12W1MA1B11ABPSA1EASY PACK Infineon Technologies |
3,164 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™ | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 9.8mOhm @ 150A, 15V | 5.55V @ 90mA | 15V | 600V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
IRLHS6276TRPBFMOSFET 2N-CH 20V 4.5A PQFN Infineon Technologies |
2,065 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9956TRPBFMOSFET 2N-CH 30V 3.5A 8-SOIC Infineon Technologies |
2,199 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPG20N06S4L26AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,139 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1430pF @ 25V | 33W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
IPG20N10S436AATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
2,137 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 100V | 20A | 36mOhm @ 17A, 10V | 3.5V @ 16µA | 15nC @ 10V | 990pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
|
IPG20N04S4L07ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
2,221 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount |
|
BSC0923NDIATMA1MOSFET 2N-CH 30V 17A/32A TISON8 Infineon Technologies |
3,841 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | 1160pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSZ215CHXTMA1MOSFET N/P-CH 20V 8TSDSON Infineon Technologies |
3,739 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC0993NDATMA1MOSFET 2N-CH 17A TISON8 Infineon Technologies |
100 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Not For New Designs | 2 N-Channel | Standard | - | 17A (Ta) | 5mOhm @ 7A, 10V | 2V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPG20N06S4L11ATMA1MOSFET 2N-CH 8TDSON Infineon Technologies |
3,898 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC076N04NDATMA1TRENCH <= 40V Infineon Technologies |
3,113 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-T2 | Active | 2 N-Channel (Dual) | Standard | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 38nC @ 10V | 2950pF @ 20V | 2.3W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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