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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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F411MR12W2M1B76BOMA1LOW POWER EASY AG-EASY2B-2 Infineon Technologies |
3,554 | - |
RFQ |
Tray | EasyPACK™ CoolSiC™ | Last Time Buy | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
IRF7343TRPBFMOSFET N/P-CH 55V 8-SOIC Infineon Technologies |
3,114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSO203PHBSO203 - 20V-250V P-CHANNEL POWE Infineon Technologies |
3,529 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF9358TRPBFMOSFET 2P-CH 30V 9.2A 8SOIC Infineon Technologies |
205 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
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IRF7104TRPBFMOSFET 2P-CH 20V 2.3A 8-SOIC Infineon Technologies |
2,894 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPG16N10S461ATMA1MOSFET 2N-CH 100V 16A 8TDSON Infineon Technologies |
155 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount |
|
DF23MR12W1M1B11BOMA1244DF23MR12 - INSULATED GATE BIPOLA Infineon Technologies |
3,681 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
FD1400R12IP4DBOSA1FD1400R12 - INSULATED GATE BIPOL Infineon Technologies |
2,009 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF9389TRPBFMOSFET N/P-CH 30V 6.8A/4.6A 8-SO Infineon Technologies |
2,915 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N and P-Channel | Logic Level Gate | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7507TRPBFMOSFET N/P-CH 20V 1.7A MICRO8 Infineon Technologies |
3,563 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N and P-Channel | Logic Level Gate | 20V | 2.4A, 1.7A | 140mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSL215CH6327XTSA1MOSFET N/P-CH 20V 1.5A TSOP-6 Infineon Technologies |
2,119 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.73nC @ 4.5V | 143pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7303TRPBFMOSFET 2N-CH 30V 4.9A 8-SOIC Infineon Technologies |
3,370 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO220N03MDGXUMA1MOSFET 2N-CH 30V 6A 8DSO Infineon Technologies |
2,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22mOhm @ 7.7A, 10V | 2.1V @ 250µA | 10nC @ 10V | 800pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSC150N03LDGATMA1MOSFET 2N-CH 30V 8A 8TDSON Infineon Technologies |
2,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15mOhm @ 20A, 10V | 2.2V @ 250µA | 13.2nC @ 10V | 1100pF @ 15V | 26W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7389TRPBFMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
2,917 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO615NGXUMA1MOSFET N/P-CH 8-SOIC Infineon Technologies |
2,625 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, SIPMOS® | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPG20N04S4L11ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
3,097 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF7341TRPBFMOSFET 2N-CH 55V 4.7A 8-SOIC Infineon Technologies |
3,612 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7380TRPBFMOSFET 2N-CH 80V 3.6A 8-SOIC Infineon Technologies |
2,770 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7907TRPBFMOSFET 2N-CH 30V 9.1A/11A 8SO Infineon Technologies |
3,011 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
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