+86 075582561136
Subir BOM
Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FF6MR12W2M1PB11BPSA1MOSFET MODULE LOW POWER EASY Infineon Technologies |
2,286 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF6MR12W2M1B70BPSA1LOW POWER EASY AG-EASY2B-2 Infineon Technologies |
3,263 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™+ | Obsolete | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF11MR12W1M1B11BOMA1MOSFET 2N-CH 1200V 100A MODULE Infineon Technologies |
161 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF2MR12KM1HOSA1MEDIUM POWER 62MM Infineon Technologies |
2,651 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
IRF9952TRPBFMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,673 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9910TRPBFMOSFET 2N-CH 20V 10A/12A 8-SOIC Infineon Technologies |
2,494 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A, 12A | 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF8910TRPBFMOSFET 2N-CH 20V 10A 8-SOIC Infineon Technologies |
2,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7905TRPBFMOSFET 2N-CH 30V 7.8A/8.9A 8SO Infineon Technologies |
3,315 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.8A, 8.9A | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC0910NDIATMA1MOSFET 2N-CH 25V 16A/31A TISON8 Infineon Technologies |
2,139 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 11A, 31A | 4.6mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | 4500pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFHS9351TRPBFMOSFET 2P-CH 30V 2.3A PQFN Infineon Technologies |
2,572 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPG20N04S412AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
3,888 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | 1470pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
FF6MR12KM1BOSA1MEDIUM POWER 62MM Infineon Technologies |
3,562 | - |
RFQ |
Ficha técnica |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSO211PP-CHANNEL POWER MOSFET Infineon Technologies |
3,896 | - |
RFQ |
Ficha técnica |
Bulk | OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.7A | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 23.9nC @ 4.5V | 920pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFHM8363TRPBFMOSFET 2N-CH 30V 11A 8PQFN Infineon Technologies |
3,433 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11A | 14.9mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPG20N06S415AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,475 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
|
IRF7304MOSFET 2P-CH 20V 4.3A 8-SOIC Infineon Technologies |
2,817 | - |
RFQ |
Ficha técnica |
Tube | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SPA15N65C3POWER FIELD-EFFECT TRANSISTOR, 1 Infineon Technologies |
3,100 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPP120N04S3-02PFET, 120A I(D), 40V, 0.0023OHM Infineon Technologies |
3,777 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF9953TRPBFMOSFET 2P-CH 30V 2.3A 8SO Infineon Technologies |
2,283 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | 2 P-Channel (Dual) | Standard | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7304TRPBFMOSFET 2P-CH 20V 4.3A 8-SOIC Infineon Technologies |
2,428 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
