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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2110-1IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
3,672 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2110SIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
2,538 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2110STRIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
3,673 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2111SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,753 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2111STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,745 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2112SIC GATE DRVR HI/LOW SIDE 16SOIC Infineon Technologies |
3,468 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2112STRIC GATE DRVR HI/LOW SIDE 16SOIC Infineon Technologies |
3,104 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
98-0065IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
3,117 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2117STRIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
2,272 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2118IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
2,011 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
98-0231IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
3,236 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2121IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies |
2,150 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | - | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2122IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
3,041 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 13V ~ 20V | 0.8V, 3V | 130mA, 130mA | Inverting | 600 V | 250ns, 250ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2125SIC GATE DRVR HIGH-SIDE 16SOIC Infineon Technologies |
2,756 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500 V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
98-0066IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,657 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2127STRIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
3,016 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2128IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
3,108 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2128SIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,491 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2130JIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,133 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2130SIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
2,190 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
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