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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2131JTRPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | - | Active | Half-Bridge | Independent | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2135STRPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
3,758 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 90ns, 40ns | 125°C (TJ) | Surface Mount |
|
|
IR2132JTRPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
2,483 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS26302DJPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
2,465 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS26302DJTRPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,474 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2130JTRPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,647 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2131SPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
2,823 | - |
RFQ |
Ficha técnica |
Tube | - | Last Time Buy | Half-Bridge | Independent | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2132PBFIC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
3,195 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Last Time Buy | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2135JPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,606 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 90ns, 40ns | 125°C (TJ) | Surface Mount |
|
|
IR2235JPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,438 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200 V | 90ns, 40ns | 125°C (TJ) | Surface Mount |
|
|
IR2233PBFIC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
310 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200 V | 90ns, 40ns | 125°C (TJ) | Through Hole |
|
1EDN8511B1EDN8511 - GATE DRIVER Infineon Technologies |
3,756 | - |
RFQ |
Ficha técnica |
Bulk | EiceDriver™ | Active | Low-Side | Single | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 1.2V, 1.9V | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
6ED003L06F2XUMA26ED003L06 - GATE DRIVER Infineon Technologies |
3,363 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
1EDN7550B1EDN7550 - GATE DRIVER Infineon Technologies |
2,694 | - |
RFQ |
Ficha técnica |
Bulk | EiceDriver™ | Active | High-Side and Low-Side | Single | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | - | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
6ED003L06-FXUMA16ED003L06 - HALF-BRIDGE BASED MO Infineon Technologies |
2,866 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
SP0016903821EDN7550 - GATE DRIVER Infineon Technologies |
3,768 | - |
RFQ |
Ficha técnica |
Bulk | EiceDriver™ | Active | High-Side and Low-Side | Single | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | - | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TLE7181EMTLE7181 - GATE DRIVER Infineon Technologies |
2,057 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5.5V ~ 45V | 1V, 2V | - | Non-Inverting | 55 V | 250ns, 200ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
1EDN8550B1EDN8550 - GATE DRIVER Infineon Technologies |
3,779 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
IR21271SPBFIR21271S - GATE DRIVER Infineon Technologies |
2,402 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
2ED2304S06FXLSA12ED2304S06 - 2ED2304S - GATE DRI Infineon Technologies |
2,022 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
