PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR4427STR

IR4427STR

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
3,583 -

RFQ

IR4427STR

Ficha técnica

Tape & Reel (TR) - Obsolete Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Non-Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
IR4428STR

IR4428STR

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
2,729 -

RFQ

IR4428STR

Ficha técnica

Tape & Reel (TR) - Obsolete Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Inverting, Non-Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
IR2277SPBF

IR2277SPBF

IR2277S - GATE DRIVER

Infineon Technologies
3,433 -

RFQ

IR2277SPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - -
TLE9180D31QKXUMA1

TLE9180D31QKXUMA1

IC MOTOR CONTROLLER 64-LQFP

Infineon Technologies
2,623 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Half-Bridge 3-Phase 2 N-Channel MOSFET 5.5V ~ 60V - 1A, 1A Non-Inverting - - -40°C ~ 150°C (TJ) Surface Mount
IR2104S

IR2104S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,381 -

RFQ

IR2104S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2151

IR2151

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,350 -

RFQ

IR2151

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V - 125mA, 250mA RC Input Circuit 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
98-0247

98-0247

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
2,478 -

RFQ

98-0247

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount
IR2133

IR2133

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
3,932 -

RFQ

IR2133

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Through Hole
IR2101

IR2101

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,406 -

RFQ

IR2101

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2104

IR2104

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
3,107 -

RFQ

IR2104

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2106

IR2106

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,320 -

RFQ

IR2106

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2108

IR2108

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,279 -

RFQ

IR2108

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2110

IR2110

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,436 -

RFQ

IR2110

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 500 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
IR2111

IR2111

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
3,341 -

RFQ

IR2111

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 8.3V, 12.6V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2112

IR2112

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies
3,397 -

RFQ

IR2112

Ficha técnica

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2113

IR2113

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,961 -

RFQ

IR2113

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
IR2117

IR2117

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies
2,615 -

RFQ

IR2117

Ficha técnica

Tube - Obsolete High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2125

IR2125

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies
2,192 -

RFQ

IR2125

Ficha técnica

Tube - Obsolete High-Side Single 1 IGBT, N-Channel MOSFET 0V ~ 18V 0.8V, 2.2V 1.6A, 3.3A Non-Inverting 500 V 43ns, 26ns -40°C ~ 150°C (TJ) Through Hole
IR2127

IR2127

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Infineon Technologies
3,113 -

RFQ

IR2127

Ficha técnica

Tube - Obsolete High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2130

IR2130

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
2,991 -

RFQ

IR2130

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 35ns -40°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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