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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IR4427STRIC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies |
3,583 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount |
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IR4428STRIC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies |
2,729 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2277SPBFIR2277S - GATE DRIVER Infineon Technologies |
3,433 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
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TLE9180D31QKXUMA1IC MOTOR CONTROLLER 64-LQFP Infineon Technologies |
2,623 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | Active | Half-Bridge | 3-Phase | 2 | N-Channel MOSFET | 5.5V ~ 60V | - | 1A, 1A | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
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IR2104SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,381 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2151IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,350 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 125mA, 250mA | RC Input Circuit | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
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98-0247IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
2,478 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2133IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
3,932 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 90ns, 40ns | 125°C (TJ) | Through Hole |
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IR2101IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,406 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2104IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,107 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
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IR2106IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,320 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
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|
IR2108IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,279 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2110IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,436 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2111IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,341 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
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IR2112IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
3,397 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2113IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,961 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2117IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
2,615 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2125IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
2,192 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500 V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2127IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
3,113 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR2130IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
2,991 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
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