PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR2213

IR2213

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
3,379 -

RFQ

IR2213

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 12V ~ 20V 6V, 9.5V 2A, 2.5A Non-Inverting 1200 V 25ns, 17ns -55°C ~ 150°C (TJ) Through Hole
IR2213S

IR2213S

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
3,253 -

RFQ

IR2213S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 12V ~ 20V 6V, 9.5V 2A, 2.5A Non-Inverting 1200 V 25ns, 17ns -55°C ~ 150°C (TJ) Surface Mount
IR2233

IR2233

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
2,129 -

RFQ

IR2233

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Through Hole
IR2233S

IR2233S

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
2,886 -

RFQ

IR2233S

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
IR2235

IR2235

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
2,041 -

RFQ

IR2235

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Through Hole
IR2235J

IR2235J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
3,550 -

RFQ

IR2235J

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
IR2235S

IR2235S

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
3,623 -

RFQ

IR2235S

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
IR21014

IR21014

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
3,468 -

RFQ

IR21014

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21014S

IR21014S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,471 -

RFQ

IR21014S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2110-2

IR2110-2

IC GATE DRVR HALF-BRIDGE 16DIP

Infineon Technologies
3,948 -

RFQ

IR2110-2

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 500 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
IR2112-1

IR2112-1

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies
2,330 -

RFQ

IR2112-1

Ficha técnica

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2112-2

IR2112-2

IC GATE DRVR HI/LOW SIDE 16DIP

Infineon Technologies
3,805 -

RFQ

IR2112-2

Ficha técnica

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2113-1

IR2113-1

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,035 -

RFQ

IR2113-1

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
IR2113-2

IR2113-2

IC GATE DRVR HALF-BRIDGE 16DIP

Infineon Technologies
2,760 -

RFQ

IR2113-2

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
IR2152

IR2152

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
3,695 -

RFQ

IR2152

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V - 125mA, 250mA RC Input Circuit 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2152S

IR2152S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,193 -

RFQ

IR2152S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V - 125mA, 250mA RC Input Circuit 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IR21716S

IR21716S

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
3,883 -

RFQ

IR21716S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT 13V ~ 20V - - Non-Inverting 600 V - -40°C ~ 150°C (TJ) Surface Mount
IR2184

IR2184

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,836 -

RFQ

IR2184

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21844

IR21844

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,530 -

RFQ

IR21844

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21844S

IR21844S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,141 -

RFQ

IR21844S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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