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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2184SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,117 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR4426IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies |
3,162 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR4426SIC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies |
2,459 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR4427IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies |
2,807 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR4427SIC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies |
2,661 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR4428IC GATE DRVR LOW-SIDE 8DIP Infineon Technologies |
2,881 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR4428SIC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies |
2,425 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR1175SIC GATE DRVR LOW-SIDE 20SSOP Infineon Technologies |
3,479 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4V ~ 5.5V | - | 2A, 2A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2101STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,122 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2102STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,172 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2103STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,493 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Inverting, Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2105IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,950 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2105SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,272 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2105STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,507 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2107IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,721 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 200mA, 350mA | Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2107STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,085 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 200mA, 350mA | Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2113STRIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
3,263 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2118STRIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
3,059 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2125STRIC GATE DRVR HIGH-SIDE 16SOIC Infineon Technologies |
3,505 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500 V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2128STRIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,348 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
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