Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N486B 1N486B - RECTIFIER DIODE, 0.2A, Rochester Electronics, LLC	30,000	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	-	50 nA @ 225 V	250 V	200mA	175°C	1 V @ 100 mA
STPS20M60SG-TR DIODE SCHOTTKY 60V 20A D2PAK STMicroelectronics	3,148	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	125 µA @ 60 V	60 V	20A	150°C (Max)	565 mV @ 20 A
1N459 1N459 - HIGH CONDUCTANCE LOW LEA Rochester Electronics, LLC	30,000	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	6pF @ 0V, 1MHz	-	25 nA @ 175 V	200 V	500mA	175°C (Max)	1 V @ 100 mA
VS-20ETF12SLHM3 DIODES - D2PAK-E3 Vishay General Semiconductor - Diodes Division	2,795	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	400 ns	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1.31 V @ 20 A
BAV21-T50R BAV21 - HIGH VOLTAGE GENERAL PUR Rochester Electronics, LLC	30,000	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	50 ns	100 nA @ 200 V	250 V	200mA	175°C (Max)	1.25 V @ 200 mA
VS-8EWF12STR-M3 DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division	2,532	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	270 ns	100 µA @ 1200 V	1200 V	8A	-40°C ~ 150°C	1.3 V @ 8 A
1N4148TR HIGH CONDUCTANCE FAST DIODE Rochester Electronics, LLC	26,500	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	4pF @ 0V, 1MHz	4 ns	5 µA @ 75 V	100 V	200mA	-65°C ~ 175°C	1 V @ 10 mA
STTH30L06GY-TR DIODE GEN PURP 600V 30A D2PAK STMicroelectronics	2,273	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	90 ns	25 µA @ 600 V	600 V	30A	-40°C ~ 175°C	1.55 V @ 30 A
FDH300ATR RECTIFIER DIODE, 0.2A, 125V, DO- Rochester Electronics, LLC	25,000	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	6pF @ 0V, 1MHz	-	1 nA @ 125 V	125 V	200mA	175°C (Max)	1 V @ 200 mA
STPSC10H065GY-TR DIODE SCHTY SIC 650V 10A D2PAK STMicroelectronics	3,768	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	480pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.75 V @ 10 A
BAW56WT1G BAW56 - HIGH-SPEED SWITCHING DIO Rochester Electronics, LLC	21,000	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
JAN1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	2,906	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 200 V	200 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-20ETS12S-M3 DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division	2,024	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
DSS10-01AS-TUB DIODE SCHOTTKY 100V 10A TO263AB IXYS	3,695	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 100 V	100 V	10A	-55°C ~ 175°C	840 mV @ 10 A
1N5282TR 1N5282 - RECTIFIER DIODE, 0.2A, Rochester Electronics, LLC	20,000	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	2.5pF @ 0V, 1MHz	4 ns	100 nA @ 55 V	80 V	200mA	175°C (Max)	900 mV @ 100 mA
TSPB5H120S S1G DIODE SCHOTTKY 120V 5A SMPC4.0 Taiwan Semiconductor Corporation	3,833	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	150 µA @ 120 V	120 V	5A	-55°C ~ 150°C	740 mV @ 5 A
MBRB4030T4G DIODE SCHOTTKY 30V 40A D2PAK onsemi	16,967	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk	SWITCHMODE™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	350 µA @ 30 V	30 V	40A	-65°C ~ 175°C	550 mV @ 40 A
1N4938UR-1 DIODE GEN PURP 175V 100MA DO213 Microchip Technology	3,759	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	50 ns	100 nA @ 175 V	175 V	100mA	-65°C ~ 175°C	1 V @ 100 mA
PMEG3002ESFYL NOW NEXPERIA PMEG3002ESF - 30 V, Rochester Electronics, LLC	18,000	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	21pF @ 1V, 1MHz	1.42 ns	9 µA @ 30 V	30 V	200mA	150°C (Max)	535 mV @ 200 mA
SE20DG-M3/I DIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division	3,490	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	150pF @ 4V, 1MHz	3 µs	25 µA @ 400 V	400 V	3.9A	-55°C ~ 175°C	1.2 V @ 20 A