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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-15TQ060-M3 DIODE SCHOTTKY 60V 15A TO220AC Vishay General Semiconductor - Diodes Division	2,628	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	720pF @ 5V, 1MHz	-	800 µA @ 60 V	60 V	15A	-55°C ~ 150°C	820 mV @ 30 A
IDK12G65C5XTMA2 DIODE SCHOTTKY 650V 12A TO263-2 Infineon Technologies	3,282	-	RFQ	Ficha técnica	Tape & Reel (TR)	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	360pF @ 1V, 1MHz	0 ns	-	650 V	12A (DC)	-55°C ~ 175°C	1.8 V @ 12 A
CD1A40 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,524	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	1A	-55°C ~ 125°C	600 mV @ 1 A
SF5405-TAP DIODE GEN PURP 500V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,773	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 175°C	1.7 V @ 3 A
1N5615E3 RECTIFIER UFR,FRR Microchip Technology	2,296	-	RFQ		Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 12V, 1MHz	150 ns	500 nA @ 200 V	200 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
LSM840G/TR13 DIODE SCHOTTKY 40V 8A DO215AB Microchip Technology	3,162	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	2 mA @ 40 V	40 V	8A	-55°C ~ 150°C	520 mV @ 8 A
BYW75TAP DIODE AVALANCHE 500V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,920	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
CDLL5818 DIODE SCHOTTKY 30V 1A DO213AB Microchip Technology	3,115	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	0.9pF @ 5V, 1MHz	-	100 µA @ 30 V	30 V	1A	-65°C ~ 150°C	600 mV @ 1 A
CD1A30 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,817	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 20 V	30 V	1A	-55°C ~ 125°C	600 mV @ 1 A
SF5405-TR DIODE GEN PURP 500V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,737	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 175°C	1.7 V @ 3 A
CD5819 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3,234	-	RFQ	Ficha técnica	Tape & Reel (TR)	Military, MIL-PRF-19500/586	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	1A	-55°C ~ 125°C	600 mV @ 1 A
LSM845G/TR13 DIODE SCHOTTKY 45V 8A DO215AB Microchip Technology	3,962	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	2 mA @ 45 V	45 V	8A	-55°C ~ 150°C	520 mV @ 8 A
BYW85-TAP DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,105	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	60pF @ 4V, 1MHz	7.5 µs	1 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1 V @ 3 A
1N6677/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,640	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Through Hole	50pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	200mA	-65°C ~ 125°C	500 mV @ 200 mA
CD1A20 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,885	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 20 V	20 V	1A	-55°C ~ 125°C	600 mV @ 1 A
SF808G C0G DIODE GEN PURP 600V 8A TO220AB Taiwan Semiconductor Corporation	2,504	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
VS-40HFR10 DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,865	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	9 mA @ 100 V	100 V	40A	-65°C ~ 190°C	1.3 V @ 125 A
VS-20ETS12FP-M3 DIODE GEN PURP 1.2KV 20A TO220FP Vishay General Semiconductor - Diodes Division	3,813	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	95 ns	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1.3 V @ 20 A
BYW75TR DIODE AVALANCHE 500V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,471	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
1N6677-1E3/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3,916	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/610	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Through Hole	50pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	200mA	-65°C ~ 125°C	500 mV @ 200 mA