Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VF10150S-E3/4W

VF10150S-E3/4W

DIODE SCHOTTKY 150V 10A ITO220AB

Vishay General Semiconductor - Diodes Division
2,340 -

RFQ

VF10150S-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.2 V @ 10 A
JAN1N5618

JAN1N5618

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology
3,939 -

RFQ

JAN1N5618

Ficha técnica

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 200°C 1.3 V @ 3 A
VS-16FR10

VS-16FR10

DIODE GEN PURP 100V 16A DO203AA

Vishay General Semiconductor - Diodes Division
2,675 -

RFQ

VS-16FR10

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 100 V 100 V 16A -65°C ~ 175°C 1.23 V @ 50 A
SE12DGHM3/I

SE12DGHM3/I

DIODE GEN PURP 400V 3.2A TO263AC

Vishay General Semiconductor - Diodes Division
2,107 -

RFQ

SE12DGHM3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 90pF @ 4V, 1MHz 3 µs 20 µA @ 400 V 400 V 3.2A -55°C ~ 175°C 1.15 V @ 12 A
DST1545S

DST1545S

DIODE SCHOTTKY 15A 45V TO277B

Littelfuse Inc.
2,207 -

RFQ

DST1545S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 868pF @ 5V, 1MHz - 1.5 mA @ 45 V 45 V 15A -55°C ~ 150°C 580 mV @ 15 A
JANTX1N5809

JANTX1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology
3,558 -

RFQ

JANTX1N5809

Ficha técnica

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 10V, 1MHz 30 ns 5 µA @ 100 V 100 V 3A -65°C ~ 175°C 875 mV @ 4 A
V20120S-E3/4W

V20120S-E3/4W

DIODE SCHOTTKY 120V 20A TO220AB

Vishay General Semiconductor - Diodes Division
3,766 -

RFQ

V20120S-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 300 µA @ 120 V 120 V 20A -40°C ~ 150°C 1.12 V @ 20 A
FFSP1665A

FFSP1665A

DIODE SCHOTTKY 650V 16A TO220-2

onsemi
2,154 -

RFQ

FFSP1665A

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 887pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 16A (DC) -55°C ~ 175°C 1.75 V @ 16 A
VS-30ETH06FP-N3

VS-30ETH06FP-N3

DIODE GEN PURP 600V 30A TO220FP

Vishay General Semiconductor - Diodes Division
3,473 -

RFQ

VS-30ETH06FP-N3

Ficha técnica

Tube FRED Pt® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
DK025LTP

DK025LTP

RECT 1000V 25A TO220 ISO

Littelfuse Inc.
2,901 -

RFQ

DK025LTP

Ficha técnica

Tube Teccor® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 4 µs 20 µA @ 1000 V 1000 V 15.9A -40°C ~ 125°C 1.6 V @ 25 A
VT2080S-E3/4W

VT2080S-E3/4W

DIODE SCHOTTKY 20A 80V TO-220AB

Vishay General Semiconductor - Diodes Division
2,090 -

RFQ

VT2080S-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 700 µA @ 80 V 80 V 20A -55°C ~ 150°C 920 mV @ 20 A
JANTX1N5711-1/TR

JANTX1N5711-1/TR

SCHOTTKY

Microchip Technology
3,743 -

RFQ

JANTX1N5711-1/TR

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF-19500/444 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2pF @ 0V, 1MHz - 200 nA @ 50 V 50 V 33mA -65°C ~ 150°C 1 V @ 15 mA
SB380

SB380

DIODE SCHOTTKY 80V 3A DO201AD

onsemi
2,611 -

RFQ

SB380

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 180pF @ 4V, 1MHz - 500 µA @ 80 V 80 V 3A -65°C ~ 125°C 850 mV @ 3 A
VS-6FR80

VS-6FR80

DIODE GEN PURP 800V 6A DO203AA

Vishay General Semiconductor - Diodes Division
2,447 -

RFQ

VS-6FR80

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 800 V 800 V 6A -65°C ~ 175°C 1.1 V @ 19 A
FFSPF1065A

FFSPF1065A

650V 10A SIC SBD

onsemi
3,006 -

RFQ

FFSPF1065A

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C -
VS-30EPH06L-N3

VS-30EPH06L-N3

DIODE GP 600V 30A TO247AD-2

Vishay General Semiconductor - Diodes Division
3,688 -

RFQ

VS-30EPH06L-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
NRVTS12120EMFST3G

NRVTS12120EMFST3G

DIODE SCHOTTKY 120V 12A 5DFN

onsemi
3,421 -

RFQ

NRVTS12120EMFST3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 55 µA @ 120 V 120 V 12A -55°C ~ 175°C 830 mV @ 12 A
JANTX1N5806US/TR

JANTX1N5806US/TR

UFR,FRR

Microchip Technology
2,040 -

RFQ

JANTX1N5806US/TR

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 975 mV @ 2.5 A
ES3HB R5G

ES3HB R5G

DIODE GEN PURP 500V 3A DO214AA

Taiwan Semiconductor Corporation
3,940 -

RFQ

ES3HB R5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 34pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.45 V @ 3 A
VS-6FR20

VS-6FR20

DIODE GEN PURP 200V 6A DO203AA

Vishay General Semiconductor - Diodes Division
3,579 -

RFQ

VS-6FR20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 200 V 200 V 6A -65°C ~ 175°C 1.1 V @ 19 A
Total 50121 Record«Prev1... 7071727374757677...2507Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario