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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MMSD459ARECTIFIER DIODE, 0.2A, 100V Rochester Electronics, LLC |
51,000 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | - | - | 150°C (Max) | - | |
|
MUR8100EGDIODE GEN PURP 1000V 8A TO220-2 Rochester Electronics, LLC |
3,842 | - |
RFQ |
Ficha técnica |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 25 µA @ 1000 V | 1000 V | 8A | -65°C ~ 175°C | 1.8 V @ 8 A |
|
BAT54S/DG/B3215NEXPERIA BAT54S - RECTIFIER DIOD Rochester Electronics, LLC |
45,000 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
LQA30T300DIODE GEN PURP 300V 30A TO220AC Power Integrations |
3,742 | - |
RFQ |
Ficha técnica |
Tube | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 13.7 ns | 250 µA @ 300 V | 300 V | 30A | 150°C (Max) | 1.95 V @ 30 A |
|
DFD05TJ-BTRECTIFIER DIODE, 0.5A, 800V V(RR Rochester Electronics, LLC |
45,000 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
LQA08TC600DIODE GEN PURP 600V 8A TO220AC Power Integrations |
3,184 | - |
RFQ |
Ficha técnica |
Tube | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 33pF @ 10V, 1MHz | 15 ns | 25 µA @ 600 V | 600 V | 8A | 150°C (Max) | 3.05 V @ 8 A |
|
BAS19,235NOW NEXPERIA BAS19 - RECTIFIER D Rochester Electronics, LLC |
43,200 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
|
MUR1560GDIODE GEN PURP 600V 15A TO220AC Rochester Electronics, LLC |
2,696 | - |
RFQ |
Ficha técnica |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.5 V @ 15 A |
|
|
PMBD7100,215NEXPERIA PMBD7100 - RECTIFIER DI Rochester Electronics, LLC |
39,640 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
APT40DQ60BGDIODE GEN PURP 600V 40A TO247 Microchip Technology |
3,925 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 25 µA @ 600 V | 600 V | 40A | -55°C ~ 175°C | 2.4 V @ 40 A | |
|
1N5393RECTIFIER DIODE, 1.5A, 200V, DO- Rochester Electronics, LLC |
35,950 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A | -50°C ~ 175°C | 1.3 V @ 1.5 A | |
|
STBR3012G2Y-TRAUTOMOTIVE-GRADE BRIDGE RECTIFIE STMicroelectronics |
3,539 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 2 µA @ 1200 V | 1200 V | 30A | -40°C ~ 175°C | 1.3 V @ 30 A |
|
APT30D120SGDIODE ULT FAST 30A 1200V D3PAK Microchip Technology |
3,165 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 370 ns | 250 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.5 V @ 30 A | |
|
UPS360E3/TR13DIODE SCHOTTKY 60V 3A POWERMITE3 Microchip Technology |
2,076 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 125°C | 630 mV @ 3.5 A | |
|
VS-12FR80DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,889 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
ISL9R1560S3STDIODE GEN PURP 600V 15A TO263-2 onsemi |
2,214 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 40 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.2 V @ 15 A |
|
BYW85TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,402 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
1N6677-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,371 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/610 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
IDK09G65C5XTMA2DIODE SCHOTTKY 650V 9A TO263-2 Infineon Technologies |
3,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 270pF @ 1V, 1MHz | 0 ns | 1.6 mA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.8 V @ 9 A |
|
|
FRQS20A065DIODE SCHOTTKY 65V 20A TO-220 FU KYOCERA AVX |
2,125 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 65 V | 65 V | 20A | -40°C ~ 150°C | 630 mV @ 10 A |
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