+86 075582561136
Subir BOM
Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N483BURDIODE GEN PURP 225V 50MA DO213AA Microchip Technology |
3,683 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 25 nA @ 225 V | 225 V | 50mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
DMA10P1600PZ-TRLPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1600 V | 1600 V | 10A | -55°C ~ 175°C | 1.26 V @ 10 A | |
|
SF5401-TAPDIODE GEN PURP 100V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,144 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
IDH09SG60CXKSA2DIODE SCHOTTKY 600V 9A TO220-2 Infineon Technologies |
3,606 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
JANTXV1N4148UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,599 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 25 nA @ 20 V | 75 V | 200mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
VIT2080S-E3/4WDIODE SCHOTTKY 20A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
2,175 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
|
1N485BURDIODE GEN PURP 180V 100MA DO213 Microchip Technology |
3,077 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 25 nA @ 180 V | 180 V | 100mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
DAA10EM1800PZ-TRLPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,859 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1800 V | 1800 V | 10A | -55°C ~ 175°C | 1.21 V @ 10 A | |
|
|
SF5401-TRDIODE GEN PURP 100V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
IDP2321XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
2,751 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Not For New Designs | - | - | - | - | - | - | - | - | ||
|
SE20DB-M3/IDIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 100 V | 100 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
1N486BURDIODE RECT STD RECOVERY Microchip Technology |
2,560 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
DPF15I600APAPWR DIODE DISC-FRED TO-220AB / T IXYS |
2,546 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
SE20DJ-M3/IDIODE GEN PURP 600V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,050 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 600 V | 600 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
APT60D20BGDIODE GEN PURP 200V 60A TO247 Microchip Technology |
3,611 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 31 ns | 250 µA @ 200 V | 200 V | 60A | -55°C ~ 175°C | 1.3 V @ 60 A | |
|
|
SE20DD-M3/IDIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
2,717 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 200 V | 200 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
BAT54W135NOW NEXPERIA BAT54W - RECTIFIER Rochester Electronics, LLC |
30,000 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA |
|
GB01SLT12-214DIODE SCHOTTKY 1.2KV 2.5A SMB GeneSiC Semiconductor |
3,920 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 69pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 2.5A | -55°C ~ 175°C | 1.8 V @ 1 A |
|
BAS40-04,235NEXPERIA BAS40-04 - RECTIFIER DI Rochester Electronics, LLC |
30,000 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
DSEI12-12ADIODE GEN PURP 1.2KV 11A TO220AC IXYS |
2,981 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 70 ns | 250 µA @ 1200 V | 1200 V | 11A | -40°C ~ 150°C | 2.6 V @ 12 A |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
