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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDK09G65C5XTMA1DIODE SCHOTTKY 650V 9A TO263-2 Infineon Technologies |
6,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 270pF @ 1V, 1MHz | 0 ns | 1.6 mA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.8 V @ 9 A |
|
|
IDK10G65C5XTMA1DIODE SCHOTTKY 650V 10A TO263-2 Infineon Technologies |
5,718 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 1.7 mA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
IDK12G65C5XTMA1DIODE SCHOTTKY 650V 12A TO263-2 Infineon Technologies |
1,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | 2.1 mA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.8 V @ 12 A |
|
IDL02G65C5XUMA1DIODE SCHOTTKY 650V 2A VSON-4 Infineon Technologies |
3,524 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 70pF @ 1V, 1MHz | 0 ns | 35 µA @ 650 V | 650 V | 2A (DC) | -55°C ~ 175°C | 1.7 V @ 2 A |
|
|
IDL04G65C5XUMA1DIODE SCHOTTKY 650V 4A VSON-4 Infineon Technologies |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 70 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A |
|
|
IDL06G65C5XUMA1DIODE SCHOTTKY 650V 6A VSON-4 Infineon Technologies |
2,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 110 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 150°C | 1.7 V @ 6 A |
|
|
IDL08G65C5XUMA1DIODE SCHOTTKY 650V 8A VSON-4 Infineon Technologies |
3,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
IDL10G65C5XUMA1DIODE SCHOTTKY 650V 10A VSON-4 Infineon Technologies |
3,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A |
|
|
IDL12G65C5XUMA1DIODE SCHOTTKY 650V 12A VSON-4 Infineon Technologies |
3,558 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 150°C | 1.7 V @ 12 A |
|
IDP1301GXUMA1DIODE GEN PURP DSO-19 Infineon Technologies |
3,552 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
ND350N12KHPSA1DIODE GP 1.2KV 350A BG-PB50ND-1 Infineon Technologies |
3,482 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1200 V | 1200 V | 350A | -40°C ~ 135°C | - | |
|
DZ600N18KHPSA1DIODE MODULE 1800V 600A Infineon Technologies |
3,113 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1800 V | 1800 V | 600A | -40°C ~ 150°C | - | |
|
|
IDP23011XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
3,092 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IDP2302XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
2,166 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
IDB06S60CATMA2DIODE SCHOTTKY 600V 6A TO263-3-2 Infineon Technologies |
39,373 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 6A (DC) | - | 1.7 V @ 6 A |
|
|
IDB10S60CATMA2DIODE SCHOTTKY 600V 10A D2PAK Infineon Technologies |
2,932 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 480pF @ 1V, 1MHz | 0 ns | 140 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
IDV08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
3,497 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 2.3 V @ 8 A | |
|
BAS3005A02VH6327XTSA1DIODE SCHOTTKY 30V 500MA SC79-2 Infineon Technologies |
2,674 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 15pF @ 5V, 1MHz | - | 300 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 500 mV @ 500 mA | |
|
|
IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
3,153 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 2.3 V @ 3 A | |
|
BAS1603WE6327HTSA1DIODE GEN PURP 80V 250MA SOD323 Infineon Technologies |
2,303 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA |
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