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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS3005B02VH6327XTSA1DIODE SCHOTTKY 30V 500MA SC79-2 Infineon Technologies |
8,545 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 5V, 1MHz | - | 25 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 620 mV @ 500 mA | |
|
BAT60AE6327HTSA1DIODE SCHOTTKY 10V 3A SOD323-2 Infineon Technologies |
55,435 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 5V, 1MHz | - | 2.6 mA @ 8 V | 10 V | 3A (DC) | 150°C (Max) | 370 mV @ 1 A |
|
IDV20E65D1XKSA1DIODE GP 650V 28A TO220-2FP Infineon Technologies |
1,003 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 40 µA @ 650 V | 650 V | 28A (DC) | -40°C ~ 175°C | 1.7 V @ 20 A | |
|
IDDD16G65C6XTMA1DIODE SCHOT 650V 43A HDSOP-10-1 Infineon Technologies |
3,400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 783pF @ 1V, 1MHz | 0 ns | 53 µA @ 420 V | 650 V | 43A (DC) | -55°C ~ 175°C | - |
|
|
IDDD12G65C6XTMA1SIC DIODES Infineon Technologies |
1,612 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 594pF @ 1V, 1MHz | 0 ns | 40 µA @ 420 V | 650 V | 34A (DC) | -55°C ~ 175°C | - |
|
IDK10G120C5XTMA1SIC DISCRETE Infineon Technologies |
417 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 525pF @ 1V, 1MHz | - | 18 µA @ 1200 V | 1200 V | 31.9A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |
|
|
IDDD20G65C6XTMA1DIODE SCHOT 650V 51A HDSOP-10-1 Infineon Technologies |
423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 970pF @ 1V, 1MHz | 0 ns | 67 µA @ 420 V | 650 V | 51A (DC) | -55°C ~ 175°C | - |
|
|
IDK16G120C5XTMA1SIC DISCRETE Infineon Technologies |
223 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 730pF @ 1V, 1MHz | - | 80 µA @ 1200 V | 1200 V | 40A (DC) | -55°C ~ 175°C | 1.95 V @ 16 A | |
|
IDH04G65C6XKSA1DIODE SCHOTTKY 650V 12A TO220-2 Infineon Technologies |
2,765 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 205pF @ 1V, 1MHz | 0 ns | 14 µA @ 420 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A | |
|
BAW78DH6327XTSA1DIODE GEN PURP 400V 1A SOT89 Infineon Technologies |
3,670 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 10pF @ 0V, 1MHz | 1 µs | 1 µA @ 400 V | 400 V | 1A (DC) | 150°C (Max) | 1.6 V @ 1 A |
|
BAT2402ELSE6327XTSA1DIODE SCHOTTKY 4V 110MA SC79-2 Infineon Technologies |
3,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 230pF @ 0V, 1MHz | - | 5 µA @ 1 V | 4 V | 110mA (DC) | -55°C ~ 150°C | 410 mV @ 10 mA | |
|
|
IDK03G65C5XTMA2DIODE SCHOTTKY 650V 3A TO263-2 Infineon Technologies |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 100pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.8 V @ 3 A |
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