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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BAS7002LE6327XTMA1 DIODE SCHOTTKY 70V 70MA TSLP-2 Infineon Technologies	3,509	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	2pF @ 0V, 1MHz	100 ps	100 nA @ 50 V	70 V	70mA (DC)	-55°C ~ 125°C	1 V @ 15 mA
BAT54E6327HTSA1 DIODE SCHOTTKY 30V 200MA SOT23-3 Infineon Technologies	123,230	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	10pF @ 1V, 1MHz	5 ns	2 µA @ 25 V	30 V	200mA (DC)	150°C (Max)	800 mV @ 100 mA
IDH20G120C5XKSA1 DIODE SCHOTTKY 1.2KV 56A TO220-2 Infineon Technologies	3,840	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1050pF @ 1V, 1MHz	0 ns	123 µA @ 1200 V	1200 V	56A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
IDW30G65C5XKSA1 DIODE SCHOTTKY 650V 30A TO247-3 Infineon Technologies	2,687	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	860pF @ 1V, 1MHz	0 ns	220 µA @ 650 V	650 V	30A (DC)	-55°C ~ 175°C	1.7 V @ 30 A
IDWD30G120C5XKSA1 SIC SCHOTTKY 1200V 30A TO247-2 Infineon Technologies	3,311	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1980pF @ 1V, 1MHz	0 ns	248 µA @ 1200 V	1200 V	87A (DC)	-55°C ~ 175°C	1.65 V @ 30 A
IDW40G65C5XKSA1 DIODE SCHOTTKY 650V 40A TO247-3 Infineon Technologies	3,663	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1140pF @ 1V, 1MHz	0 ns	220 µA @ 650 V	650 V	40A (DC)	-55°C ~ 175°C	1.7 V @ 40 A
IDP08E65D1XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	726	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	80 ns	40 µA @ 650 V	650 V	8A	-40°C ~ 175°C	1.7 V @ 8 A
BAT6402WH6327XTSA1 DIODE SCHOTTKY 40V 120MA SCD80-2 Infineon Technologies	3,632	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	6pF @ 1V, 1MHz	5 ns	2 µA @ 30 V	40 V	120mA	150°C (Max)	750 mV @ 100 mA
HFA15PB60PBF DIODE GEN PURP 600V 15A TO247AC Infineon Technologies	3,580	-	RFQ	Ficha técnica	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	60 ns	10 µA @ 600 V	600 V	15A	-55°C ~ 150°C	1.7 V @ 15 A
HFA15TB60PBF DIODE GEN PURP 600V 15A TO220AC Infineon Technologies	2,526	-	RFQ	Ficha técnica	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	60 ns	10 µA @ 600 V	600 V	15A	-55°C ~ 150°C	1.7 V @ 15 A
IDH05G65C5XKSA1 DIODE SCHOTTKY 650V 5A TO220-2 Infineon Technologies	3,410	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	160pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	5A (DC)	-55°C ~ 175°C	1.7 V @ 5 A
IDW40G65C5FKSA1 DIODE SCHOTTKY 650V 40A TO247-3 Infineon Technologies	3,702	-	RFQ	Ficha técnica	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	1140pF @ 1V, 1MHz	0 ns	1.4 mA @ 650 V	650 V	40A (DC)	-55°C ~ 175°C	1.7 V @ 40 A
IDH20G65C5XKSA1 DIODE SCHOTTKY 650V 20A TO220-2 Infineon Technologies	3,881	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	590pF @ 1V, 1MHz	0 ns	700 µA @ 650 V	650 V	20A (DC)	-55°C ~ 175°C	1.7 V @ 20 A
IDW10G65C5FKSA1 DIODE SCHOTTKY 650V 10A TO247-3 Infineon Technologies	2,557	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	300pF @ 1V, 1MHz	0 ns	400 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
IDH06G65C5XKSA1 DIODE SCHOTTKY 650V 6A TO220-2 Infineon Technologies	3,738	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	190pF @ 1V, 1MHz	0 ns	210 µA @ 650 V	650 V	6A (DC)	-55°C ~ 175°C	1.7 V @ 6 A
IDH04G65C5XKSA1 DIODE SCHOTTKY 650V 4A TO220-2 Infineon Technologies	3,741	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	130pF @ 1V, 1MHz	0 ns	140 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
IDW16G65C5FKSA1 DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies	2,727	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	470pF @ 1V, 1MHz	0 ns	600 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A
IDW20G65C5FKSA1 DIODE SCHOTTKY 650V 20A TO247-3 Infineon Technologies	3,265	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	590pF @ 1V, 1MHz	0 ns	700 µA @ 650 V	650 V	20A (DC)	-55°C ~ 175°C	1.7 V @ 20 A
IDH16G65C5XKSA1 DIODE SCHOTTKY 650V 16A TO220-2 Infineon Technologies	3,297	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	470pF @ 1V, 1MHz	0 ns	550 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A
BAT5403WE6327HTSA1 DIODE SCHOT 30V 200MA SOD323-2 Infineon Technologies	8,994	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	10pF @ 1V, 1MHz	5 ns	2 µA @ 25 V	30 V	200mA (DC)	150°C (Max)	800 mV @ 100 mA