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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDV30E60CDIODE GEN PURP 600V 21A TO22FP Infineon Technologies |
2,328 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 130 ns | 40 µA @ 600 V | 600 V | 21A | -55°C ~ 175°C | 2.05 V @ 30 A | |
|
BAS116E6327HTSA1DIODE GEN PURP 80V 250MA SOT23-3 Infineon Technologies |
1,367 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 1.5 µs | 5 nA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
IDY10S120XKSA1DIODE SCHOTTKY 1.2KV 5A TO247HC Infineon Technologies |
3,250 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 120 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
IDY15S120XKSA1DIODE SCHOTTKY 1.2KV 7.5A TO247 Infineon Technologies |
2,082 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 375pF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 7.5A (DC) | -55°C ~ 150°C | 1.8 V @ 10 A |
|
BAS1602VH6327XTSA1DIODE GEN PURP 80V 200MA SC79-2 Infineon Technologies |
2,090 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
BAS3010A03WE6327HTSA1DIODE SCHOTTKY 30V 1A SOD323-2 Infineon Technologies |
2,485 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 5V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 470 mV @ 1 A | |
|
|
BAT60BE6327HTSA1DIODE SCHOTTKY 10V 3A SOD323-2 Infineon Technologies |
3,508 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 5V, 1MHz | - | 25 µA @ 8 V | 10 V | 3A (DC) | 150°C (Max) | 600 mV @ 1 A | |
|
|
BAS140WE6327HTSA1DIODE SCHOTTKY 40V 120MA SOD323 Infineon Technologies |
2,028 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 5pF @ 0V, 1MHz | 100 ps | 1 µA @ 30 V | 40 V | 120mA (DC) | -55°C ~ 150°C | 1 V @ 40 mA | |
|
IDP45E60XKSA1DIODE GEN PURP 600V 71A TO220-2 Infineon Technologies |
277 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Through Hole | - | 140 ns | 50 µA @ 600 V | 600 V | 71A (DC) | -55°C ~ 175°C | 2 V @ 45 A | |
|
BAS1602WH6327XTSA1DIODE GEN PURP 80V 200MA SCD80-2 Infineon Technologies |
3,137 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
|
BAS7002WH6327XTSA1DIODE SCHOTTKY 70V 70MA SCD80-2 Infineon Technologies |
2,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
IDD04S60CBUMA1DIODE SCHOTTKY 600V 5.6A TO252-3 Infineon Technologies |
1,406 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 5.6A | -55°C ~ 175°C | 1.9 V @ 4 A |
|
IDFW40E65D1EXKSA1DIODE GP 650V 42A TO247-3-AI Infineon Technologies |
3,122 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 76 ns | 40 µA @ 650 V | 650 V | 42A (DC) | -40°C ~ 175°C | 2.1 V @ 40 A | |
|
|
IDV30E65D2XKSA1DIODE GEN PURP 650V 30A TO220-2 Infineon Technologies |
3,915 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 40 µA @ 650 V | 650 V | 30A (DC) | -40°C ~ 175°C | 2.2 V @ 30 A | |
|
|
IDP30E120XKSA1DIODE GEN PURP 1.2KV 50A TO220-2 Infineon Technologies |
2,881 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 243 ns | 100 µA @ 1200 V | 1200 V | 50A (DC) | -55°C ~ 150°C | 2.15 V @ 30 A | |
|
IDW75D65D1XKSA1DIODE GEN PURP 650V 150A TO247-3 Infineon Technologies |
2,546 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 108 ns | 40 µA @ 650 V | 650 V | 150A (DC) | -40°C ~ 175°C | 1.7 V @ 75 A | |
|
|
IDH16G65C5XKSA2DIODE SCHOTKY 650V 16A TO220-2-1 Infineon Technologies |
3,484 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
|
IDH16G65C6XKSA1DIODE SCHOTTKY 650V 34A TO220-2 Infineon Technologies |
3,028 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 783pF @ 1V, 1MHz | 0 ns | 53 µA @ 420 V | 650 V | 34A (DC) | -55°C ~ 175°C | 1.35 V @ 16 A | |
|
|
IDH20G65C6XKSA1DIODE SCHOTTKY 650V 41A TO220-2 Infineon Technologies |
2,891 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 970pF @ 1V, 1MHz | 0 ns | 67 µA @ 420 V | 650 V | 41A (DC) | -55°C ~ 175°C | 1.35 V @ 20 A | |
|
IDW20G65C5XKSA1DIODE SCHOTTKY 650V 20A TO247-3 Infineon Technologies |
2,691 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 210 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A |
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