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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRD3CH53DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,331 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,593 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH5BD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,123 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
3,406 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 96 ns | 100 nA @ 1200 V | 1200 V | 5A | -40°C ~ 150°C | 2.7 V @ 5 A | |
|
|
IRD3CH82DB6DIODE GEN PURP 1.2KV 150A DIE Infineon Technologies |
2,172 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 355 ns | 3 µA @ 1200 V | 1200 V | 150A | -40°C ~ 150°C | 2.7 V @ 150 A | |
|
|
IRD3CH82DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,497 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,315 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
3,219 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 154 ns | 200 nA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 2.7 V @ 10 A | |
|
|
IRD3CH9DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,832 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,829 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IDD04SG60CHUMA1DIODE SCHOTTKY 600V 4A TO252-3 Infineon Technologies |
2,231 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
IDD06SG60CHUMA1DIODE SCHOTTKY 600V 6A TO252-3 Infineon Technologies |
2,363 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
IDH06G65C6XKSA1DIODE SCHOTTKY 650V 16A TO220-2 Infineon Technologies |
500 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 1V, 1MHz | 0 ns | 20 µA @ 420 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.35 V @ 6 A | |
|
|
IDC08S120EX1SA3DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies |
3,696 | - |
RFQ |
Ficha técnica |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 7.5A (DC) | -55°C ~ 175°C | 1.8 V @ 7.5 A |
|
|
IDC08S120EX7SA1DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies |
3,099 | - |
RFQ |
Ficha técnica |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 180 µA @ 1200 V | 1200 V | 7.5A (DC) | -55°C ~ 175°C | 1.8 V @ 7.5 A |
|
IDDD04G65C6XTMA1DIODE SCHOT 650V 13A HDSOP-10-1 Infineon Technologies |
3,560 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 205pF @ 1V, 1MHz | 0 ns | 14 µA @ 420 V | 650 V | 13A (DC) | -55°C ~ 175°C | - |
|
|
IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 Infineon Technologies |
3,042 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
3,064 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IDT05S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
2,177 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IDT06S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
3,009 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
