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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-6TQ040HN3DIODE SCHOTTKY 40V 6A TO220AC Vishay General Semiconductor - Diodes Division |
2,674 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A |
|
VS-ETH1506-1-M3DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
3,524 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 29 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A |
|
GP10Y-E3/73DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
V35PWM10HM3/IDIODE SCHOTTKY 100V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2500pF @ 4V, 1MHz | - | 800 µA @ 100 V | 100 V | 35A | -40°C ~ 175°C | 900 mV @ 35 A |
|
V30120SG-M3/4WDIODE SCHOTTKY 30A 120V TO-220AB Vishay General Semiconductor - Diodes Division |
3,286 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A | |
|
BY448GP-E3/73DIODE GEN PURP 1.65KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
3,740 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 µs | 5 µA @ 1650 V | 1650 V | 1.5A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
VSSAF3L45-M3/6BDIODE SCHOTTKY 3A 45V DO-221AC Vishay General Semiconductor - Diodes Division |
2,497 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 425pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A | -40°C ~ 150°C | 540 mV @ 3 A |
|
|
GI1-1600GP-E3/73DIODE GEN PURP 1.6KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1600 V | 1600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
VIT1080S-E3/4WDIODE SCHOTTKY 80V 10A TO262AA Vishay General Semiconductor - Diodes Division |
3,045 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A |
|
|
VIT3080S-M3/4WDIODE SCHOTTKY 30A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
2,825 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A | |
|
31GF4-M3/73DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,264 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.25 V @ 3 A | |
|
V15P45HM3_A/IDIODE SCHOTTKY 45V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,597 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 15A (DC) | -40°C ~ 150°C | 580 mV @ 15 A |
|
|
VI30100SG-M3/4WDIODE SCHOTTKY 30A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
3,970 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A | |
|
|
V15P6HM3_A/HDIODE SCHOTTKY 60V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,912 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.6 mA @ 60 V | 60 V | 15A | -40°C ~ 150°C | 620 mV @ 15 A |
|
VS-12TQ045S-M3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,176 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
UH3BHE3_A/IDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,499 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
VS-10ETF12STRL-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,886 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
MBRB10100-E3/4WDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
UH3CHE3_A/IDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,628 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
BYT56K-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,738 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A |
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