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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE100PWG-M3/IDIODE GEN PURP 400V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 400 V | 400 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
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BYW73-TRDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,773 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
VS-8ETL06STRR-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
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VS-15ETH03STRL-M3DIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,902 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
|
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SE100PWJ-M3/IDIODE GEN PURP 600V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 600 V | 600 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
|
|
BYW83-TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,790 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
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BYW76RAS15-10DIODE AVAL 3A 600V SOD64 Vishay General Semiconductor - Diodes Division |
2,883 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | - | - | 200 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
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VS-15ETH03STRR-M3DIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,672 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
|
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ES3DHM3_A/H3A 200V SM ULTRAFAST RECT SMC Vishay General Semiconductor - Diodes Division |
2,567 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
VFT2080S-E3/4WDIODE SCHOTTKY 20A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
SS3P3L-M3/87ADIODE SCHOTTKY 30V 3A TO277A Vishay General Semiconductor - Diodes Division |
3,395 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
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VB20120SG-M3/8WDIODE SCHOTTKY 20A 120V TO-263AB Vishay General Semiconductor - Diodes Division |
3,519 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 20A | -55°C ~ 150°C | 1.33 V @ 20 A | |
|
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VB30120SG-E3/4WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,407 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A |
|
VS-15ETU12-M3DIODE FRED 1.2KV 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,479 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 167 ns | 80 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 2.78 V @ 15 A |
|
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ES3DHM3_A/I3A 200V SM ULTRAFAST RECT SMC Vishay General Semiconductor - Diodes Division |
2,172 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
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SS3P3LHM3_A/IDIODE SCHOTTKY 30V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,615 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
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VB20120SG-M3/4WDIODE SCHOTTKY 20A 120V TO-263AB Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 20A | -55°C ~ 150°C | 1.33 V @ 20 A | |
|
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VS-6TQ035STRL-M3DIODE SCHOTTKY 35V 6A TO263AB Vishay General Semiconductor - Diodes Division |
2,126 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 35 V | 35 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
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VS-6TQ035STRR-M3DIODE SCHOTTKY 35V 6A TO263AB Vishay General Semiconductor - Diodes Division |
3,513 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 35 V | 35 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
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BYV29B-300-E3/81DIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,839 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
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