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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-ETU1506S-M3DIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,549 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
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VS-25ETS08S-M3DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
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AR4PGHM3_A/IDIODE AVALANCHE 400V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,480 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
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VS-ETX1506S-M3DIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,754 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 36 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.4 V @ 15 A |
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AR4PJHM3_A/HDIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,577 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
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BYWB29-100HE3_A/PDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,043 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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VS-8ETL06-1-M3DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
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AR4PJHM3_A/IDIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
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BYWB29-150HE3_A/PDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,598 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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AR4PKHM3_A/HDIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
3,906 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
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BYWB29-200HE3_A/PDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,914 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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AR4PKHM3_A/IDIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,166 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
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BYWB29-50HE3_A/PDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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VFT2080S-M3/4WDIODE SCHOTTKY 20A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
3,873 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
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AR4PMHM3_A/HDIODE AVALANCH 1KV 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
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VS-12TQ035S-M3DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
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MBR10H100-E3/45DIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,788 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
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BYV29F-300-E3/45DIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,875 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
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V35PW10HM3/IDIODE SCHOTTKY 100V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,251 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2500pF @ 4V, 1MHz | - | 1 mA @ 100 V | 100 V | 35A | -40°C ~ 150°C | 880 mV @ 35 A |
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BYV29F-400-E3/45DIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,143 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
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