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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-10ETF02STRR-M3 DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division	2,804	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	100 µA @ 200 V	200 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
MBRB1090-E3/4W DIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division	3,806	-	RFQ	Ficha técnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	10A	-65°C ~ 150°C	800 mV @ 10 A
V10PM45-M3/I RECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division	3,684	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1850pF @ 4V, 1MHz	-	300 µA @ 45 V	45 V	10A	-40°C ~ 175°C	600 mV @ 10 A
UH3BHE3_A/H DIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division	2,559	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	40 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 175°C	1.05 V @ 3 A
BYW74TAP DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,742	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
VS-10ETF04STRL-M3 DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division	3,031	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	100 µA @ 400 V	400 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
MBRB1090-E3/8W DIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division	3,931	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	10A	-65°C ~ 150°C	800 mV @ 10 A
UH3CHE3_A/H DIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division	3,018	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	40 ns	5 µA @ 150 V	150 V	3A	-55°C ~ 175°C	1.05 V @ 3 A
BYW84-TAP DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,405	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	60pF @ 4V, 1MHz	7.5 µs	1 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1 V @ 3 A
VS-10ETF04STRR-M3 DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division	3,969	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	100 µA @ 480 V	400 V	10A	-	1.2 V @ 10 A
V20150SG-M3/4W DIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division	3,632	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.6 V @ 20 A
BYM36E-TR DIODE AVALANCHE 1KV 1.5A SOD64 Vishay General Semiconductor - Diodes Division	2,241	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	150 ns	5 µA @ 1000 V	1000 V	1.5A	-55°C ~ 175°C	1.78 V @ 3 A
VS-10ETF06STRR-M3 DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division	2,005	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	100 µA @ 600 V	600 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
VS-20TQ035-M3 DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division	3,302	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	1400pF @ 5V, 1MHz	-	2.7 mA @ 35 V	35 V	20A	-55°C ~ 150°C	730 mV @ 40 A
BYT56K-TR DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,067	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
VS-10ETF10STRL-M3 DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division	3,273	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	310 ns	100 µA @ 1000 V	1000 V	10A	-40°C ~ 150°C	1.33 V @ 10 A
VS-20TQ040-M3 DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division	3,163	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	1400pF @ 5V, 1MHz	-	2.7 mA @ 40 V	40 V	20A	-55°C ~ 150°C	730 mV @ 40 A
BYW74TR DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,807	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
VS-10ETF10STRR-M3 DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division	2,673	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	310 ns	100 µA @ 1000 V	1000 V	10A	-40°C ~ 150°C	1.33 V @ 10 A
BYWB29-100-E3/45 DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division	2,944	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	10 µA @ 100 V	100 V	8A	-65°C ~ 150°C	1.3 V @ 20 A