Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYW84-TR

BYW84-TR

DIODE AVALANCHE 600V 3A SOD64

Vishay General Semiconductor - Diodes Division
2,252 -

RFQ

BYW84-TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 60pF @ 4V, 1MHz 7.5 µs 1 µA @ 600 V 600 V 3A -55°C ~ 175°C 1 V @ 3 A
VS-10ETF12STRR-M3

VS-10ETF12STRR-M3

DIODE GEN PURP 1.2KV 10A D2PAK

Vishay General Semiconductor - Diodes Division
3,502 -

RFQ

VS-10ETF12STRR-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 310 ns 100 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.33 V @ 10 A
BYWB29-150-E3/45

BYWB29-150-E3/45

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,752 -

RFQ

BYWB29-150-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 10 µA @ 150 V 150 V 8A -65°C ~ 150°C 1.3 V @ 20 A
SF5400-TAP

SF5400-TAP

DIODE GEN PURP 50V 3A SOD64

Vishay General Semiconductor - Diodes Division
3,520 -

RFQ

SF5400-TAP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 1.1 V @ 3 A
BYWB29-200-E3/45

BYWB29-200-E3/45

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,751 -

RFQ

BYWB29-200-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 10 µA @ 200 V 200 V 8A -65°C ~ 150°C 1.3 V @ 20 A
SF5400-TR

SF5400-TR

DIODE GEN PURP 50V 3A SOD64

Vishay General Semiconductor - Diodes Division
2,206 -

RFQ

SF5400-TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 1.1 V @ 3 A
BYV29F-300HE3_A/P

BYV29F-300HE3_A/P

DIODE GEN PURP 300V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
2,266 -

RFQ

BYV29F-300HE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 300 V 300 V 8A -40°C ~ 150°C 1.25 V @ 8 A
BYWB29-50-E3/45

BYWB29-50-E3/45

DIODE GEN PURP 50V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,714 -

RFQ

BYWB29-50-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 10 µA @ 50 V 50 V 8A -65°C ~ 150°C 1.3 V @ 20 A
V35DM120-M3/I

V35DM120-M3/I

DIODE SCHOTTKY 120V 6.3A TO263AC

Vishay General Semiconductor - Diodes Division
2,770 -

RFQ

V35DM120-M3/I

Ficha técnica

Tape & Reel (TR) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.2 mA @ 120 V 120 V 6.3A -40°C ~ 175°C 1.05 V @ 35 A
BYV29F-400HE3_A/P

BYV29F-400HE3_A/P

DIODE GEN PURP 400V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
3,629 -

RFQ

BYV29F-400HE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.25 V @ 8 A
VF20150SG-E3/4W

VF20150SG-E3/4W

DIODE SCHOTTKY 150V 20A ITO220AB

Vishay General Semiconductor - Diodes Division
3,937 -

RFQ

VF20150SG-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.6 V @ 20 A
VS-HFA08TB60HN3

VS-HFA08TB60HN3

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,671 -

RFQ

VS-HFA08TB60HN3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 37 ns 5 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
VS-ETL1506-1-M3

VS-ETL1506-1-M3

DIODE GEN PURP 600V 15A TO262

Vishay General Semiconductor - Diodes Division
3,421 -

RFQ

VS-ETL1506-1-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 210 ns 15 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.07 V @ 15 A
BYW29-150-E3/45

BYW29-150-E3/45

DIODE GEN PURP 150V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,730 -

RFQ

BYW29-150-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 25 ns 10 µA @ 150 V 150 V 8A -65°C ~ 150°C 1.3 V @ 20 A
AR4PDHM3_A/H

AR4PDHM3_A/H

DIODE AVALANCHE 200V 2A TO277A

Vishay General Semiconductor - Diodes Division
3,026 -

RFQ

AR4PDHM3_A/H

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 77pF @ 4V, 1MHz 140 ns 10 µA @ 200 V 200 V 2A -55°C ~ 175°C 1.6 V @ 4 A
VS-ETU1506-1-M3

VS-ETU1506-1-M3

DIODE GEN PURP 600V 15A TO262

Vishay General Semiconductor - Diodes Division
4,000 -

RFQ

VS-ETU1506-1-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 15 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.9 V @ 15 A
BYW29-50-E3/45

BYW29-50-E3/45

DIODE GEN PURP 50V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,277 -

RFQ

BYW29-50-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 25 ns 10 µA @ 50 V 50 V 8A -65°C ~ 150°C 1.3 V @ 20 A
AR4PDHM3_A/I

AR4PDHM3_A/I

DIODE AVALANCHE 200V 2A TO277A

Vishay General Semiconductor - Diodes Division
2,974 -

RFQ

AR4PDHM3_A/I

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 77pF @ 4V, 1MHz 140 ns 10 µA @ 200 V 200 V 2A -55°C ~ 175°C 1.6 V @ 4 A
VS-ETX1506-1-M3

VS-ETX1506-1-M3

DIODE GEN PURP 600V 15A TO262

Vishay General Semiconductor - Diodes Division
2,189 -

RFQ

VS-ETX1506-1-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 36 µA @ 600 V 600 V 15A -65°C ~ 175°C 3.4 V @ 15 A
AR4PGHM3_A/H

AR4PGHM3_A/H

DIODE AVALANCHE 400V 2A TO277A

Vishay General Semiconductor - Diodes Division
2,374 -

RFQ

AR4PGHM3_A/H

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 77pF @ 4V, 1MHz 140 ns 10 µA @ 400 V 400 V 2A -55°C ~ 175°C 1.6 V @ 4 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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