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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS10P3HM3_A/HDIODE SCHOTTKY 30V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,572 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 750pF @ 4V, 1MHz | - | 800 µA @ 30 V | 30 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
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SS10P3HM3_A/IDIODE SCHOTTKY 30V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,054 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 750pF @ 4V, 1MHz | - | 800 µA @ 30 V | 30 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
|
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SS10P4HM3_A/IDIODE SCHOTTKY 40V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,885 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 750pF @ 4V, 1MHz | - | 800 µA @ 40 V | 40 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
|
V20DL45BP-M3/IDIODE SCHOTTKY 45V 20A SMPD Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.5 mA @ 45 V | 45 V | 20A (DC) | -40°C ~ 150°C | 640 mV @ 20 A |
|
VS-85HF140DIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 85A | -65°C ~ 150°C | 1.4 V @ 267 A | |
|
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VS-86HFR80DIODE GEN PURP 800V 8A DO203AB Vishay General Semiconductor - Diodes Division |
2,243 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 800 V | 800 V | 8A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
BYV28-050-TAPDIODE AVALANCHE 50V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 3.5A | -55°C ~ 175°C | 1.1 V @ 5 A | |
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BYV28-050-TRDIODE AVALANCHE 50V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
2,799 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 3.5A | -55°C ~ 175°C | 1.1 V @ 5 A | |
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AR4PMHM3_A/IDIODE AVALANCH 1KV 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,934 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
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FESB8BT-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
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FESB8DT-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,026 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
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GIB1402-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,549 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
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VS-15ETL06S-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,203 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
|
VS-85HFLR100S05DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,803 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 100 V | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
FES16AT-E3/45DIODE GEN PURP 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
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FES16CT-E3/45DIODE GEN PURP 150V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,147 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
VS-15AWL06FNTRL-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,720 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 120 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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VS-15AWL06FNTRR-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 120 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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VS-85HFL10S05DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,461 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 100 V | 100 V | 85A | -40°C ~ 125°C | - | |
|
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VS-15EWH06FNTRL-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,242 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 36 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.1 V @ 15 A |
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