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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-15EWH06FNTRR-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
3,418 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 36 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.1 V @ 15 A |
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VS-15EWL06FNTRL-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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VS-15EWL06FNTRR-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
3,801 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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VS-15EWX06FNTRL-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
3,325 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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VS-15EWX06FNTRR-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
VS-85HFL20S05DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,488 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 200 V | 200 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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VFT3080S-E3/4WDIODE SCHOTTKY 30A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A | |
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BYWF29-100-E3/45DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,645 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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BYWF29-150-E3/45DIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,906 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
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VS-85HFL40S05DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,427 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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BYWF29-50-E3/45DIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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VS-85HFLR40S05DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,793 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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RGP02-18E-E3/73DIODE GEN PURP 1.8KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,722 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1800 V | 1800 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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RGP02-20E-E3/73DIODE GEN PURP 2KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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RGP02-17E-E3/73DIODE GEN PURP 1.7KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,320 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1700 V | 1700 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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VS-8ETH03STRL-M3DIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
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VS-8ETH03STRR-M3DIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,286 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
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UGB8BT-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,126 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
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VS-60APF04-M3DIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,220 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 400 V | 400 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
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UGB8CT-E3/45DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,876 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
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