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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S8CKHM3/IDIODE GEN PURP 800V 8A DO214AB Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
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S8CMHM3/IDIODE GEN PURP 1KV 8A DO214AB Vishay General Semiconductor - Diodes Division |
3,585 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
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V12PM10HM3/HDIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 750 mV @ 12 A |
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VS-71HFR10DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,438 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 15 mA @ 100 V | 100 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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V12PM10HM3/IDIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,628 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 750 mV @ 12 A |
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VS-72HFR10DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 100 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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VS-SD700C36LDIODE GP 3.6KV 700A DO200AB Vishay General Semiconductor - Diodes Division |
3,225 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 50 mA @ 3600 V | 3600 V | 700A | - | 1.66 V @ 1000 A | |
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V12PM10-M3/HDIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 750 mV @ 12 A |
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V12PM10-M3/IDIODE SCHOTTKY 100V 12A TO277A Vishay General Semiconductor - Diodes Division |
3,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 12A | -40°C ~ 150°C | 750 mV @ 12 A |
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VS-80APF02-M3DIODE GEN PURP 200V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 190 ns | 100 µA @ 200 V | 200 V | 80A | -40°C ~ 150°C | 1.25 V @ 80 A | |
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VS-80APF04-M3DIODE GEN PURP 400V 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,689 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 190 ns | 100 µA @ 400 V | 400 V | 80A | -40°C ~ 150°C | 1.25 V @ 80 A | |
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VS-80APF06-M3DIODE GEN PURP 600V 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,481 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 190 ns | 100 µA @ 600 V | 600 V | 80A | -40°C ~ 150°C | 1.25 V @ 80 A | |
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VS-80APF10-M3DIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,946 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 80A | -40°C ~ 150°C | 1.35 V @ 80 A | |
|
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V10P45HM3_A/IDIODE SCHOTTKY 45V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,798 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 570 mV @ 10 A |
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V10P6HM3_A/HDIODE SCHOTTKY 60V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.9 mA @ 60 V | 60 V | 10A | -40°C ~ 150°C | 590 mV @ 10 A |
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1N4003GP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,430 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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1N4005GP-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,484 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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GP10-4004-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,321 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
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GP10-4007-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 1000 V | 1A | - | - | |
|
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VS-72HF20DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,150 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 200 V | 70A | -65°C ~ 150°C | 1.35 V @ 220 A |
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