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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-15ETH06S-M3 DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division	2,423	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	15A	-65°C ~ 175°C	2.2 V @ 15 A
VBT1080S-M3/8W DIODE SCHOTTKY 10A 80V TO-263AB Vishay General Semiconductor - Diodes Division	2,571	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	600 µA @ 80 V	80 V	10A	-55°C ~ 150°C	810 mV @ 10 A
VBT1080S-M3/4W DIODE SCHOTTKY 10A 80V TO-263AB Vishay General Semiconductor - Diodes Division	3,038	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	600 µA @ 80 V	80 V	10A	-55°C ~ 150°C	810 mV @ 10 A
VFT3080S-M3/4W DIODE SCHOTTKY 30A 80V ITO-220AB Vishay General Semiconductor - Diodes Division	3,942	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	1 mA @ 80 V	80 V	30A	-55°C ~ 150°C	950 mV @ 30 A
V20120SG-E3/4W DIODE SCHOTTKY 120V 20A TO220AB Vishay General Semiconductor - Diodes Division	3,143	-	RFQ	Ficha técnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	250 µA @ 120 V	120 V	20A	-40°C ~ 150°C	1.33 V @ 20 A
VS-85HFLR60S05 DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division	2,756	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	500 ns	100 µA @ 600 V	600 V	85A	-40°C ~ 125°C	1.75 V @ 266.9 A
VS-71HF140 DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division	2,344	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	4.5 mA @ 1400 V	1400 V	70A	-65°C ~ 150°C	1.46 V @ 220 A
VS-71HFR140 DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division	3,720	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	4.5 mA @ 1400 V	1400 V	70A	-65°C ~ 150°C	1.46 V @ 220 A
V35PW15-M3/I DIODE SCHOTTKY 150V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division	2,123	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1620pF @ 4V, 1MHz	-	250 µA @ 150 V	150 V	35A	-40°C ~ 150°C	1.4 V @ 35 A
V20150SG-E3/4W DIODE SCHOTTKY 150V 20A TO220AB Vishay General Semiconductor - Diodes Division	2,639	-	RFQ	Ficha técnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.6 V @ 20 A
FESF8AT-E3/45 DIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,056	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	950 mV @ 8 A
VS-86HF100 DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division	3,897	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	9 mA @ 1000 V	1000 V	85A	-65°C ~ 180°C	1.2 V @ 267 A
FESF8BT-E3/45 DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,319	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	950 mV @ 8 A
VS-86HFR100 DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division	3,901	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	9 mA @ 1000 V	1000 V	85A	-65°C ~ 180°C	1.2 V @ 267 A
FESF8CT-E3/45 DIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,548	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A
FESF8DT-E3/45 DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,539	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
FESF8GT-E3/45 DIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,317	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
VF20150S-M3/4W DIODE SCHOTTKY 20A 150V ITO220AB Vishay General Semiconductor - Diodes Division	2,170	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	250 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.43 V @ 20 A
VS-8ETU12-M3 DIODE FRED 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division	2,385	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	144 ns	55 µA @ 1200 V	1200 V	8A	-55°C ~ 175°C	2.55 V @ 8 A
BYV28-100-TR DIODE AVALANCHE 100V 3.5A SOD64 Vishay General Semiconductor - Diodes Division	3,776	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	30 ns	1 µA @ 100 V	100 V	3.5A	-55°C ~ 175°C	1.1 V @ 5 A