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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE80PWDHM3/IDIODE GEN PURP 200V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,067 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 200 V | 200 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
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SE80PWGHM3/IDIODE GEN PURP 400V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,896 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 400 V | 400 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
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SE80PWJHM3/IDIODE GEN PURP 600V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,421 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 600 V | 600 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
V10P15-M3/HDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,935 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
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V10P15-M3/IDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,983 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
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VS-4ESH01HM3/87ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 4 V | 100 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
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VS-4ESH02HM3/87ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,637 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
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VS-100BGQ015HF4DIODE SCHOTTKY 15V 100A POWERTAB Vishay General Semiconductor - Diodes Division |
2,844 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 3800pF @ 5V, 1MHz | - | 18 mA @ 15 V | 15 V | 100A | -55°C ~ 125°C | 520 mV @ 100 A |
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VS-100BGQ045HF4DIODE SCHOTTKY 45V 100A POWERTAB Vishay General Semiconductor - Diodes Division |
2,520 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 2700pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 100A | -55°C ~ 150°C | 770 mV @ 100 A |
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VS-EBU8006HF4DIODE GEN PURP 600V 80A POWERTAB Vishay General Semiconductor - Diodes Division |
2,057 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 8 µA @ 600 V | 600 V | 80A | -65°C ~ 175°C | 1.53 V @ 80 A | |
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VS-71HF60DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,920 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 600 V | 600 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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VS-30EPF12-M3DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
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SS10PH9HM3_A/IDIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 90 V | 90 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
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V15PM6HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2300pF @ 4V, 1MHz | - | 1.2 mA @ 60 V | 60 V | 15A | -40°C ~ 175°C | 640 mV @ 15 A |
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SE10DDHM3/IDIODE GEN PURP 200V 3A TO263AC Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 100 V | 200 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
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SE10DGHM3/IDIODE GEN PURP 400V 3A TO263AC Vishay General Semiconductor - Diodes Division |
3,185 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
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SE10DJHM3/IDIODE GEN PURP 600V 3A TO263AC Vishay General Semiconductor - Diodes Division |
2,510 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
|
|
SE10DBHM3/IDIODE GEN PURP 100V 3A TO263AC Vishay General Semiconductor - Diodes Division |
3,106 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3000 ns | 15 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 1.15 V @ 10 A |
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S10CK-M3/IDIODE GEN PURP 800V 10A DO214AB Vishay General Semiconductor - Diodes Division |
2,161 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1 V @ 10 A | |
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S10CM-M3/IDIODE GEN PURP 1KV 10A DO214AB Vishay General Semiconductor - Diodes Division |
3,986 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 1000 V | 1000 V | 10A | -55°C ~ 150°C | 1 V @ 10 A |
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