Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
MSCDC50H701AG

MSCDC50H701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,296 -

RFQ

MSCDC50H701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
VS-110MT120KPBF

VS-110MT120KPBF

BRIDGE RECT 3P 1.2KV 110A MT-K

Vishay General Semiconductor - Diodes Division
2,869 -

RFQ

VS-110MT120KPBF

Ficha técnica

Tray - Active Three Phase Standard 1.2 kV 110 A - - -40°C ~ 150°C (TJ) Chassis Mount MT-K Module
M5060TB600

M5060TB600

BRIDGE RECT 3P 600V 60A MODULE

Sensata-Crydom
3,559 -

RFQ

M5060TB600

Ficha técnica

Bulk - Active Three Phase Standard 600 V 60 A 1.35 V @ 50 A - -40°C ~ 125°C (TJ) Chassis Mount Module
M5060TB1400

M5060TB1400

BRIDGE RECT 3P 1.4KV 60A MODULE

Sensata-Crydom
2,728 -

RFQ

M5060TB1400

Ficha técnica

Bulk - Active Three Phase Standard 1.4 kV 60 A 1.35 V @ 50 A - -40°C ~ 125°C (TJ) Chassis Mount Module
M50100SB600

M50100SB600

BRIDGE RECT 1P 600V 100A MODULE

Sensata-Crydom
2,376 -

RFQ

M50100SB600

Ficha técnica

Bulk - Active Single Phase Standard 600 V 100 A 1.2 V @ 100 A - -40°C ~ 125°C (TJ) Chassis Mount Module
APTDF200H60G

APTDF200H60G

BRIDGE RECT 1PHASE 600V 270A SP6

Microchip Technology
2,904 -

RFQ

APTDF200H60G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 270 A 2 V @ 200 A 350 µA @ 600 V -40°C ~ 175°C (TJ) Chassis Mount SP6
M50100TB600

M50100TB600

BRIDGE RECT 3P 600V 100A MODULE

Sensata-Crydom
3,675 -

RFQ

M50100TB600

Ficha técnica

Bulk - Active Three Phase Standard 600 V 100 A 1.2 V @ 100 A - -40°C ~ 125°C (TJ) Chassis Mount Module
MSCDC50X1201AG

MSCDC50X1201AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,579 -

RFQ

MSCDC50X1201AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 1.2 kV - - 200 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
M50100TB1600

M50100TB1600

BRIDGE RECT 3P 1.6KV 100A MODULE

Sensata-Crydom
3,268 -

RFQ

M50100TB1600

Ficha técnica

Bulk - Active Three Phase Standard 1.6 kV 100 A 1.2 V @ 100 A - -40°C ~ 125°C (TJ) Chassis Mount Module
UGB6124AG

UGB6124AG

BRIDGE RECT 1P 10.5KV 1A UGB-1

IXYS
3,068 -

RFQ

UGB6124AG

Ficha técnica

Bulk - Active Single Phase Standard 10.5 kV 1 A - - 150°C (TJ) Chassis Mount UGB-1
MSCDC50X1701AG

MSCDC50X1701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
3,469 -

RFQ

MSCDC50X1701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 1.7 kV - - 200 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H120AG

MSCDC200H120AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,276 -

RFQ

MSCDC200H120AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 800 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H170AG

MSCDC200H170AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
3,742 -

RFQ

MSCDC200H170AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.7 kV - - 800 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
UG4KB60

UG4KB60

BRIDGE RECT 1PHASE 600V 4A D3K

SMC Diode Solutions
933 -

RFQ

UG4KB60

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
DF005-G

DF005-G

BRIDGE RECT 1PHASE 50V 1A 4-DF

Comchip Technology
951 -

RFQ

DF005-G

Ficha técnica

Tube - Active Single Phase Standard 50 V 1 A 1.1 V @ 1 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
GBU410

GBU410

BRIDGE RECT 1PHASE 1KV 4A GBU

SMC Diode Solutions
3,540 -

RFQ

GBU410

Ficha técnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ610

GBJ610

BRIDGE RECT 1PHASE 1KV 6A GBJ

SMC Diode Solutions
102 -

RFQ

GBJ610

Ficha técnica

Tube - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBU810G

GBU810G

BRIDGE RECT 1PHASE 1KV 8A GBU

SMC Diode Solutions
685 -

RFQ

GBU810G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBU10005-G

GBU10005-G

BRIDGE RECT 1PHASE 50V 10A GBU

Comchip Technology
139 -

RFQ

GBU10005-G

Ficha técnica

Tube - Active Single Phase Standard 50 V 10 A 1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B

GBU6B

BRIDGE RECT 1PHASE 100V 6A GBU

GeneSiC Semiconductor
383 -

RFQ

GBU6B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 6 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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