Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
MSC50DC70HJ

MSC50DC70HJ

PM-DIODE-SIC-SBD-SOT227

Microchip Technology
3,697 -

RFQ

MSC50DC70HJ

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
T483C

T483C

BRIDGE RECT 1P 600V 10A MODULE

Sensata-Crydom
3,845 -

RFQ

T483C

Ficha técnica

Bulk - Not For New Designs Single Phase Standard 600 V 10 A - - - Chassis Mount Module
B485C-2

B485C-2

BRIDGE RECT 1PHASE 600V 50A

Sensata-Crydom
2,504 -

RFQ

B485C-2

Ficha técnica

Bulk - Active Single Phase Standard 600 V 50 A 1.35 V @ 50 A - -40°C ~ 125°C (TJ) QC Terminal B48 Module
MSCDC50X701AG

MSCDC50X701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,466 -

RFQ

MSCDC50X701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
M5060TB1200

M5060TB1200

BRIDGE RECT 3P 1.2KV 60A MODULE

Sensata-Crydom
3,869 -

RFQ

M5060TB1200

Ficha técnica

Bulk - Active Three Phase Standard 1.2 kV 60 A 1.35 V @ 50 A - -40°C ~ 125°C (TJ) Chassis Mount Module
M50100TB800

M50100TB800

BRIDGE RECT 3P 800V 100A MODULE

Sensata-Crydom
2,827 -

RFQ

M50100TB800

Ficha técnica

Bulk - Active Three Phase Standard 800 V 100 A 1.2 V @ 100 A - -40°C ~ 125°C (TJ) Chassis Mount Module
MSCDC50H1701AG

MSCDC50H1701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
3,778 -

RFQ

MSCDC50H1701AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.7 kV - - 200 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC100H70AG

MSCDC100H70AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
3,189 -

RFQ

MSCDC100H70AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 400 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC100H120AG

MSCDC100H120AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,306 -

RFQ

MSCDC100H120AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 400 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H70AG

MSCDC200H70AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,660 -

RFQ

MSCDC200H70AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 800 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
GBU4K-T

GBU4K-T

1PH BRIDGE GBU 800V 4A

Diotec Semiconductor
2,499 -

RFQ

GBU4K-T

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.8 A 1 V @ 4 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-T

GBU4D-T

1PH BRIDGE GBU 200V 4A

Diotec Semiconductor
3,876 -

RFQ

GBU4D-T

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.8 A 1 V @ 4 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-T

GBU4B-T

1PH BRIDGE GBU 100V 4A

Diotec Semiconductor
3,881 -

RFQ

GBU4B-T

Ficha técnica

Tube - Active Single Phase Standard 100 V 2.8 A 1 V @ 4 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-T

GBU4G-T

1PH BRIDGE GBU 400V 4A

Diotec Semiconductor
3,777 -

RFQ

GBU4G-T

Ficha técnica

Tube - Active Single Phase Standard 400 V 2.8 A 1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J-T

GBU4J-T

1PH BRIDGE GBU 600V 4A

Diotec Semiconductor
3,242 -

RFQ

GBU4J-T

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.8 A 1 V @ 4 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A-T

GBU4A-T

1PH BRIDGE GBU 50V 4A

Diotec Semiconductor
2,878 -

RFQ

GBU4A-T

Ficha técnica

Tube - Active Single Phase Standard 50 V 2.8 A 1 V @ 4 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-T

GBU6D-T

1PH BRIDGE GBU 200V 6A

Diotec Semiconductor
2,663 -

RFQ

GBU6D-T

Ficha técnica

Tube - Active Single Phase Standard 200 V 4.2 A 1 V @ 6 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-T

GBU6J-T

1PH BRIDGE GBU 600V 6A

Diotec Semiconductor
2,682 -

RFQ

GBU6J-T

Ficha técnica

Tube - Active Single Phase Standard 600 V 4.2 A 1 V @ 6 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6A-T

GBU6A-T

1PH BRIDGE GBU 50V 6A

Diotec Semiconductor
3,422 -

RFQ

GBU6A-T

Ficha técnica

Tube - Active Single Phase Standard 50 V 4.2 A 1 V @ 6 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B-T

GBU6B-T

1PH BRIDGE GBU 100V 6A

Diotec Semiconductor
3,064 -

RFQ

GBU6B-T

Ficha técnica

Tube - Active Single Phase Standard 100 V 4.2 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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