Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU6D

GBU6D

BRIDGE RECT 1PHASE 200V 6A GBU

onsemi
749 -

RFQ

GBU6D

Ficha técnica

Tube - Active Single Phase Standard 200 V 6 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-E3/45

GBU4G-E3/45

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division
873 -

RFQ

GBU4G-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-E3/51

GBU4D-E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
652 -

RFQ

GBU4D-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBB10R

VS-2KBB10R

BRIDGE RECT 1P 100V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
485 -

RFQ

VS-2KBB10R

Ficha técnica

Bulk - Active Single Phase Standard 100 V 1.9 A - - -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
GBU8B-E3/45

GBU8B-E3/45

BRIDGE RECT 1PHASE 100V 3.9A GBU

Vishay General Semiconductor - Diodes Division
120 -

RFQ

GBU8B-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3.9 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-E3/51

GBU8M-E3/51

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division
682 -

RFQ

GBU8M-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006-E3/45

BU1006-E3/45

BRIDGE RECT 1P 600V 3.2A BU

Vishay General Semiconductor - Diodes Division
742 -

RFQ

BU1006-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-E3/45

BU1210-E3/45

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
248 -

RFQ

BU1210-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6D-E3/51

GBU6D-E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
891 -

RFQ

GBU6D-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3.8 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-E3/45

GBU6G-E3/45

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,530 -

RFQ

GBU6G-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1208-E3/45

BU1208-E3/45

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
223 -

RFQ

BU1208-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB1540-E3/45

GSIB1540-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
637 -

RFQ

GSIB1540-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.5 A 950 mV @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2010-M3/45

BU2010-M3/45

BRIDGE RECT 1P 1KV 20A BU

Vishay General Semiconductor - Diodes Division
483 -

RFQ

BU2010-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB1580N-M3/45

GSIB1580N-M3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
821 -

RFQ

GSIB1580N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
DFB2540

DFB2540

BRIDGE RECT 1PHASE 400V 25A TS6P

onsemi
715 -

RFQ

DFB2540

Ficha técnica

Tube - Active Single Phase Standard 400 V 25 A 1.1 V @ 25 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU4A

GBU4A

BRIDGE RECT 1PHASE 50V 4A GBU

GeneSiC Semiconductor
353 -

RFQ

GBU4A

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBPC1210-E4/51

GBPC1210-E4/51

BRIDGE RECT 1PHASE 1KV 12A GBPC

Vishay General Semiconductor - Diodes Division
100 -

RFQ

GBPC1210-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GSIB680-E3/45

GSIB680-E3/45

BRIDGE RECT 1P 800V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
131 -

RFQ

GSIB680-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.8 A 950 mV @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2008-E3/45

BU2008-E3/45

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
214 -

RFQ

BU2008-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
B483C-2

B483C-2

BRIDGE RECT 1PHASE 600V 35A

Sensata-Crydom
3,134 -

RFQ

B483C-2

Ficha técnica

Bulk - Active Single Phase Standard 600 V 35 A 1.35 V @ 50 A - -40°C ~ 125°C (TJ) QC Terminal B48 Module
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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