Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BR81

BR81

BRIDGE RECT 1PHASE 100V 8A BR-8

GeneSiC Semiconductor
455 -

RFQ

BR81

Ficha técnica

Bulk - Active Single Phase Standard 100 V 8 A 1.1 V @ 4 A 10 µA @ 100 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
KBU6D-E4/51

KBU6D-E4/51

BRIDGE RECT 1PHASE 200V 6A KBU

Vishay General Semiconductor - Diodes Division
218 -

RFQ

KBU6D-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 6 A 1 V @ 6 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBU8D-E3/45

GBU8D-E3/45

BRIDGE RECT 1PHASE 200V 3.9A GBU

Vishay General Semiconductor - Diodes Division
918 -

RFQ

GBU8D-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.9 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBU1004-G

KBU1004-G

BRIDGE RECT 1PHASE 400V 10A KBU

Comchip Technology
381 -

RFQ

KBU1004-G

Ficha técnica

Tray - Active Single Phase Standard 400 V 10 A 1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBU8J-E3/51

GBU8J-E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,022 -

RFQ

GBU8J-E3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-E3/45

GBU8M-E3/45

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division
833 -

RFQ

GBU8M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ810-F

GBJ810-F

BRIDGE RECT 1PHASE 1KV 8A GBJ

Diodes Incorporated
345 -

RFQ

GBJ810-F

Ficha técnica

Tube - Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 5 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1508-F

GBJ1508-F

BRIDGE RECT 1PHASE 800V 15A GBJ

Diodes Incorporated
3,300 -

RFQ

GBJ1508-F

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 1.05 V @ 7.5 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2008-F

GBJ2008-F

BRIDGE RECT 1PHASE 800V 20A GBJ

Diodes Incorporated
2,530 -

RFQ

GBJ2008-F

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU6B-E3/51

GBU6B-E3/51

BRIDGE RECT 1PHASE 100V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,789 -

RFQ

GBU6B-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 100 V 3.8 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-E3/45

GBU6D-E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
796 -

RFQ

GBU6D-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.8 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K-E3/45

GBU6K-E3/45

BRIDGE RECT 1PHASE 800V 3.8A GBU

Vishay General Semiconductor - Diodes Division
790 -

RFQ

GBU6K-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.8 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-E3/51

GBU6J-E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
604 -

RFQ

GBU6J-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B-E3/45

GBU6B-E3/45

BRIDGE RECT 1PHASE 100V 3.8A GBU

Vishay General Semiconductor - Diodes Division
394 -

RFQ

GBU6B-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3.8 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1206-E3/45

BU1206-E3/45

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
315 -

RFQ

BU1206-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBJ2010-F

GBJ2010-F

BRIDGE RECT 1PHASE 1KV 20A GBJ

Diodes Incorporated
3,181 -

RFQ

GBJ2010-F

Ficha técnica

Tube - Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
VS-2KBB40R

VS-2KBB40R

BRIDGE RECT 1P 400V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
468 -

RFQ

VS-2KBB40R

Ficha técnica

Bulk - Active Single Phase Standard 400 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 400 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
VS-2KBB40

VS-2KBB40

BRIDGE RECT 1P 400V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
380 -

RFQ

Bulk - Active Single Phase Standard 400 V 1.9 A 1.1 V @ 1.9 A - -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
GSIB660-E3/45

GSIB660-E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,154 -

RFQ

GSIB660-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.8 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB620-E3/45

GSIB620-E3/45

BRIDGE RECT 1P 200V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
150 -

RFQ

GSIB620-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.8 A 950 mV @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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