Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBL005-E4/51

KBL005-E4/51

BRIDGE RECT 1PHASE 50V 4A KBL

Vishay General Semiconductor - Diodes Division
510 -

RFQ

KBL005-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBL06-E3/51

GBL06-E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
216 -

RFQ

GBL06-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU1010

GBU1010

BRIDGE RECT 1PHASE 1KV 10A GBU

Diodes Incorporated
3,971 -

RFQ

GBU1010

Ficha técnica

Tube - Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU1001

GBU1001

BRIDGE RECT 1PHASE 100V 10A GBU

Diodes Incorporated
3,841 -

RFQ

GBU1001

Ficha técnica

Tube - Active Single Phase Standard 100 V 10 A 1 V @ 5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B

GBU6B

BRIDGE RECT 1PHASE 100V 6A GBU

onsemi
178 -

RFQ

GBU6B

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA20-E3/51

G3SBA20-E3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
905 -

RFQ

G3SBA20-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ806-F

GBJ806-F

BRIDGE RECT 1PHASE 600V 8A GBJ

Diodes Incorporated
2,864 -

RFQ

GBJ806-F

Ficha técnica

Tube - Active Single Phase Standard 600 V 8 A 1 V @ 4 A 5 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ804-F

GBJ804-F

BRIDGE RECT 1PHASE 400V 8A GBJ

Diodes Incorporated
3,496 -

RFQ

GBJ804-F

Ficha técnica

Tube - Active Single Phase Standard 400 V 8 A 1 V @ 4 A 5 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU804

GBU804

BRIDGE RECT 1PHASE 400V 8A GBU

Diodes Incorporated
154 -

RFQ

GBU804

Ficha técnica

Tube - Active Single Phase Standard 400 V 8 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6A

GBU6A

BRIDGE RECT 1PHASE 50V 6A GBU

onsemi
397 -

RFQ

GBU6A

Ficha técnica

Tube - Active Single Phase Standard 50 V 6 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBP10

VS-2KBP10

BRIDGE RECT 1PHASE 1KV 2A D-44

Vishay General Semiconductor - Diodes Division
490 -

RFQ

VS-2KBP10

Ficha técnica

Bulk VS-2KBP Active Single Phase Standard 1 kV 2 A 1 V @ 1 A 10 µA @ 1000 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, D-44
VS-2KBB100

VS-2KBB100

BRIDGE RECT 1PHASE 1KV 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
384 -

RFQ

VS-2KBB100

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 1.9 A 1.1 V @ 1.9 A 10 µA @ 1000 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
VS-2KBB80R

VS-2KBB80R

BRIDGE RECT 1P 800V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
395 -

RFQ

VS-2KBB80R

Ficha técnica

Bulk - Active Single Phase Standard 800 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 800 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
VS-2KBB20R

VS-2KBB20R

BRIDGE RECT 1P 200V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
482 -

RFQ

VS-2KBB20R

Ficha técnica

Bulk - Active Single Phase Standard 200 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
GBU8A

GBU8A

BRIDGE RECT 1PHASE 50V 8A GBU

onsemi
247 -

RFQ

GBU8A

Ficha técnica

Tube - Active Single Phase Standard 50 V 8 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ2001-F

GBJ2001-F

BRIDGE RECT 1PHASE 100V 20A GBJ

Diodes Incorporated
224 -

RFQ

GBJ2001-F

Ficha técnica

Tube - Active Single Phase Standard 100 V 20 A 1.05 V @ 10 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ606-F

GBJ606-F

BRIDGE RECT 1PHASE 600V 6A GBJ

Diodes Incorporated
2,134 -

RFQ

GBJ606-F

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 3 A 5 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2002-F

GBJ2002-F

BRIDGE RECT 1PHASE 200V 20A GBJ

Diodes Incorporated
3,902 -

RFQ

GBJ2002-F

Ficha técnica

Tube - Active Single Phase Standard 200 V 20 A 1.05 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2004-F

GBJ2004-F

BRIDGE RECT 1PHASE 400V 20A GBJ

Diodes Incorporated
2,114 -

RFQ

GBJ2004-F

Ficha técnica

Tube - Active Single Phase Standard 400 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1002-F

GBJ1002-F

BRIDGE RECT 1PHASE 200V 10A GBJ

Diodes Incorporated
106 -

RFQ

GBJ1002-F

Ficha técnica

Tube - Active Single Phase Standard 200 V 10 A 1.05 V @ 5 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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