Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BU2506-M3/51

BU2506-M3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,215 -

RFQ

BU2506-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2508-M3/51

BU2508-M3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

BU2508-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/51

BU2510-M3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
3,881 -

RFQ

BU2510-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2006-M3/45

BU2006-M3/45

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division
2,091 -

RFQ

BU2006-M3/45

Ficha técnica

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2008-M3/45

BU2008-M3/45

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division
2,812 -

RFQ

BU2008-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU25H06-M3/P

BU25H06-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,426 -

RFQ

BU25H06-M3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-M3/P

BU25H08-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,673 -

RFQ

BU25H08-M3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H06-E3/P

BU25H06-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,087 -

RFQ

BU25H06-E3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-E3/P

BU25H08-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,415 -

RFQ

BU25H08-E3/P

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU2508-M3/45

BU2508-M3/45

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,642 -

RFQ

BU2508-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/45

BU2510-M3/45

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
2,862 -

RFQ

BU2510-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB2520N-M3/45

GSIB2520N-M3/45

BRIDGE RECT 1P 200V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,024 -

RFQ

GSIB2520N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2540N-M3/45

GSIB2540N-M3/45

BRIDGE RECT 1P 400V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,538 -

RFQ

GSIB2540N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2560N-M3/45

GSIB2560N-M3/45

BRIDGE RECT 1P 600V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,620 -

RFQ

GSIB2560N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 25 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
PB3008-E3/45

PB3008-E3/45

BRIDGE RECT 1P 800V 30A PB

Vishay General Semiconductor - Diodes Division
3,487 -

RFQ

PB3008-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 30 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
KBU6A-E4/51

KBU6A-E4/51

BRIDGE RECT 1PHASE 50V 6A KBU

Vishay General Semiconductor - Diodes Division
2,484 -

RFQ

KBU6A-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 6 A 1 V @ 6 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8A-E4/51

KBU8A-E4/51

BRIDGE RECT 1PHASE 50V 8A KBU

Vishay General Semiconductor - Diodes Division
3,418 -

RFQ

KBU8A-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 8 A 1 V @ 8 A 10 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
VS-KBPC6005

VS-KBPC6005

BRIDGE RECTIFIER 50V 6.0A D-72

Vishay General Semiconductor - Diodes Division
3,319 -

RFQ

VS-KBPC6005

Ficha técnica

Bulk VS-KBPC6 Active Single Phase Standard 50 V 6 A 1.2 V @ 3 A 10 µA @ 50 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC606

VS-KBPC606

BRIDGE RECTIFIER 600V 6.0A D-72

Vishay General Semiconductor - Diodes Division
2,068 -

RFQ

VS-KBPC606

Ficha técnica

Bulk VS-KBPC6 Active Single Phase Standard 600 V 6 A 1.2 V @ 3 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC802

VS-KBPC802

BRIDGE RECTIFIER 200V 8.0A D-72

Vishay General Semiconductor - Diodes Division
3,539 -

RFQ

VS-KBPC802

Ficha técnica

Bulk VS-KBPC8 Active Single Phase Standard 200 V 8 A 1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
Total 1397 Record«Prev1... 2829303132333435...70Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario