Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK65A10N1,S4X

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage
3,274 -

RFQ

TK65A10N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK28A65W,S5X

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage
2,582 -

RFQ

TK28A65W,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,553 -

RFQ

TK31Z60X,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,802 -

RFQ

TK62Z60X,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK7R0E08QM,S1X

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage
212 -

RFQ

TK7R0E08QM,S1X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C Through Hole
TK5R1A08QM,S4X

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage
2,518 -

RFQ

TK5R1A08QM,S4X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C Through Hole
TK3R3E08QM,S1X

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage
3,433 -

RFQ

TK3R3E08QM,S1X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C Through Hole
TK190E65Z,S1X

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage
200 -

RFQ

TK190E65Z,S1X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK190A65Z,S4X

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage
175 -

RFQ

TK190A65Z,S4X

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK155A65Z,S4X

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage
2,633 -

RFQ

TK155A65Z,S4X

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C Through Hole
SSM6K781G,LF

SSM6K781G,LF

MOSFET N-CH 12V 7A 6WCSP6C

Toshiba Semiconductor and Storage
500 -

RFQ

SSM6K781G,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 18mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4 nC @ 4.5 V ±8V 600 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
TW048N65C,S1F

TW048N65C,S1F

G3 650V SIC-MOSFET TO-247 48MOH

Toshiba Semiconductor and Storage
2,174 -

RFQ

TW048N65C,S1F

Ficha técnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 40A (Tc) 18V 65mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C Through Hole
SSM3J15FS,LF

SSM3J15FS,LF

MOSFET P-CH 30V 100MA SSM

Toshiba Semiconductor and Storage
413 -

RFQ

SSM3J15FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K56FS,LF

SSM3K56FS,LF

MOSFET N-CH 20V 800MA SSM

Toshiba Semiconductor and Storage
749,990 -

RFQ

SSM3K56FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM6K504NU,LF

SSM6K504NU,LF

MOSFET N-CH 30V 9A 6UDFNB

Toshiba Semiconductor and Storage
2,075 -

RFQ

SSM6K504NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 19.5mOhm @ 4A, 10V 2.5V @ 100µA 4.8 nC @ 4.5 V ±20V 620 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM3K59CTB,L3F

SSM3K59CTB,L3F

MOSFET N-CH 40V 2A CST3B

Toshiba Semiconductor and Storage
591 -

RFQ

SSM3K59CTB,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 2A (Ta) 1.8V, 8V 215mOhm @ 1A, 8V 1.2V @ 1mA 1.1 nC @ 4.2 V ±12V 130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J36FS,LF

SSM3J36FS,LF

MOSFET P-CH 20V 330MA SSM

Toshiba Semiconductor and Storage
63,173 -

RFQ

SSM3J36FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active P-Channel MOSFET (Metal Oxide) 20 V 330mA (Ta) 1.5V, 4.5V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2 nC @ 4 V ±8V 43 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J118TU(TE85L)

SSM3J118TU(TE85L)

MOSFET P-CH 30V 1.4A UFM

Toshiba Semiconductor and Storage
455 -

RFQ

SSM3J118TU(TE85L)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSII Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V - - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6K518NU,LF

SSM6K518NU,LF

MOSFET N-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage
324 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6 nC @ 4.5 V ±8V 410 pF @ 10 V - 1.25W (Ta) 150°C Surface Mount
SSM6K517NU,LF

SSM6K517NU,LF

MOSFET N-CH 30V 6A 6UDFNB

Toshiba Semiconductor and Storage
219 -

RFQ

SSM6K517NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 4.5V 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2 nC @ 4.5 V +12V, -8V 310 pF @ 15 V - 1.25W (Ta) 150°C Surface Mount
Total 1042 Record«Prev1234...53Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario