+86 075582561136
Subir BOM
Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
38DN06B02ELEMXPSA1POWER DIODE BG-D_ELEM-1 Infineon Technologies |
2,225 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 600 V | 600 V | 5140A | 180°C (Max) | 960 mV @ 4500 A | |
|
DZ600N12KHPSA1DIODE GEN PURP 1.2KV 735A MODULE Infineon Technologies |
3,317 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1200 V | 1200 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | |
|
|
46DN06B02ELEMXPSA1POWER DIODE BG-D_ELEM-1 Infineon Technologies |
3,142 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 600 V | 600 V | 10450A | 180°C (Max) | 980 mV @ 6000 A | |
|
DZ600N14KHPSA1DIODE GEN PURP 1.4KV 735A MODULE Infineon Technologies |
3,197 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1400 V | 1400 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | |
|
DZ600N16KHPSA1DIODE GEN PURP 1.6KV 735A MODULE Infineon Technologies |
2,497 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1600 V | 1600 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | |
|
IDB15E60ATMA1DIODE GEN PURP 600V 29.2A TO263 Infineon Technologies |
2,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 87 ns | 50 µA @ 600 V | 600 V | 29.2A (DC) | -40°C ~ 175°C | 2 V @ 15 A | |
|
IDD08SG60CXTMA2DIODE SCHOTTKY 600V 8A TO252-3 Infineon Technologies |
2,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 240pF @ 1V, 1MHz | 0 ns | 70 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 2.1 V @ 8 A |
|
56DN06B02ELEMXPSA1STD THYR/DIODEN DISC Infineon Technologies |
3,094 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 60 mA @ 600 V | 600 V | 11140A | 180°C (Max) | 940 mV @ 8000 A | |
|
|
DZ435N40KHPSA1DIODE GEN PURP 4KV 700A MODULE Infineon Technologies |
3,998 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 4000 V | 4000 V | 700A | -40°C ~ 150°C | 1.71 V @ 1200 A | |
|
|
65DN06B02ELEMXPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,930 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 100 mA @ 600 V | 600 V | 15130A | 180°C (Max) | 890 mV @ 8000 A | |
|
|
IDB30E60ATMA1DIODE GEN PURP 600V 52.3A TO263 Infineon Technologies |
3,870 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 126 ns | 50 µA @ 600 V | 600 V | 52.3A (DC) | -40°C ~ 175°C | 2 V @ 30 A | |
|
IDH03SG60CXKSA2DIODE SCHOTTKY 600V 3A TO220-2 Infineon Technologies |
2,170 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 60pF @ 1V, 1MHz | 0 ns | 15 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 2.3 V @ 3 A |
|
IDW40E65D1FKSA1DIODE GEN PURP 650V 80A TO247-3 Infineon Technologies |
3,179 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 129 ns | 40 µA @ 650 V | 650 V | 80A | -40°C ~ 175°C | 1.7 V @ 40 A | |
|
AIDW10S65C5XKSA1DIODE SCHOTTKY 650V 10A TO247 Infineon Technologies |
3,178 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 303pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A (DC) | -40°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDD09SG60CXTMA2DIODE SCHOTTKY 600V 9A TO252-3 Infineon Technologies |
3,329 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
|
IDD10SG60CXTMA2DIODE SCHOTTKY 600V 10A TO252-3 Infineon Technologies |
2,826 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 290pF @ 1V, 1MHz | 0 ns | 90 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 2.1 V @ 10 A |
|
|
IDK05G65C5XTMA2DIODE SCHOTTKY 650V 5A TO263-2 Infineon Technologies |
2,737 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 160pF @ 1V, 1MHz | 0 ns | 830 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
AIDW16S65C5XKSA1DIODE SCHOTTKY 650V 16A TO247 Infineon Technologies |
3,816 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 471pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 16A (DC) | -40°C ~ 175°C | 1.7 V @ 16 A |
|
|
IDH05G65C5XKSA2DIODE SCHOTTKY 650V 5A TO220-2 Infineon Technologies |
3,069 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 160pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
|
IDK12G65C5XTMA2DIODE SCHOTTKY 650V 12A TO263-2 Infineon Technologies |
3,282 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | - | 650 V | 12A (DC) | -55°C ~ 175°C | 1.8 V @ 12 A |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
