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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDK20G120C5XTMA1SIC DISCRETE Infineon Technologies |
2,306 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 1050pF @ 1V, 1MHz | - | 123 µA @ 1200 V | 1200 V | 56A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | |
|
IDWD20G120C5XKSA1SIC SCHOTTKY 1200V 20A TO247-2 Infineon Technologies |
3,719 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1368pF @ 1V, 1MHz | 0 ns | 166 µA @ 1200 V | 1200 V | 62A (DC) | -55°C ~ 175°C | 1.65 V @ 20 A |
|
IDW20G65C5BXKSA2DIODE SCHOTTKY 650V 10A TO247-3 Infineon Technologies |
2,764 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDW32G65C5BXKSA2DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies |
2,715 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
IDM02G120C5XTMA1DIODE SCHOTTKY 1200V 2A TO252-2 Infineon Technologies |
3,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | 0 ns | 18 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A |
|
|
IDK02G120C5XTMA1SIC DISCRETE Infineon Technologies |
781 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | - | 18 µA @ 1200 V | 1200 V | 11.8A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A | |
|
IDWD10G120C5XKSA1SIC SCHOTTKY 1200V 10A TO247-2 Infineon Technologies |
3,747 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 80 µA @ 1200 V | 1200 V | 34A (DC) | -55°C ~ 175°C | 1.65 V @ 10 A |
|
D4600U45X172XPSA1DIODE GP 4500V 4450A D17226K-1 Infineon Technologies |
2,570 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 25 mA @ 4500 V | 4500 V | 4450A | 140°C (Max) | 2 V @ 2500 A | |
|
BAS2103WE6327HTSA1DIODE GEN PURP 200V 250MA SOD323 Infineon Technologies |
2,339 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
|
IDK02G65C5XTMA2DIODE SCHOTTKY 650V 2A TO263-2 Infineon Technologies |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 70pF @ 1V, 1MHz | 0 ns | 330 µA @ 650 V | 650 V | 2A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
GATELEAD28134XPSA1DUMMY 57 Infineon Technologies |
3,192 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
IDL02G65C5XUMA2DIODE SCHOTTKY 650V 2A VSON-4 Infineon Technologies |
2,056 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 70pF @ 1V, 1MHz | 0 ns | 35 µA @ 650 V | 650 V | 2A (DC) | -55°C ~ 175°C | 1.7 V @ 2 A |
|
IDD03SG60CXTMA2DIODE SCHOTTKY 600V 3A TO252-3 Infineon Technologies |
880 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 60pF @ 1V, 1MHz | 0 ns | 15 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 2.3 V @ 3 A |
|
IDH04SG60CXKSA2DIODE SCHOTTKY 600V 4A TO220-2 Infineon Technologies |
2,969 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 80pF @ 1V, 1MHz | 0 ns | 25 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 2.3 V @ 4 A |
|
|
GLHUELSE1626XPSA1DUMMY 57 Infineon Technologies |
3,517 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GLHUELSE1627XPSA1DUMMY 57 Infineon Technologies |
2,328 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
IDP30E65D2XKSA1DIODE GEN PURP 650V 60A TO220-2 Infineon Technologies |
2,630 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 40 µA @ 650 V | 650 V | 60A (DC) | -40°C ~ 175°C | 2.2 V @ 30 A | |
|
|
IDK06G65C5XTMA2DIODE SCHOTTKY 650V 6A TO263-2 Infineon Technologies |
3,484 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 1.1 mA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A |
|
IDD05SG60CXTMA2DIODE SCHOTTKY 600V 5A TO252-3 Infineon Technologies |
3,781 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
|
IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies |
2,493 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Through Hole | - | 143 ns | 40 µA @ 600 V | 600 V | 60A (DC) | -40°C ~ 175°C | 2 V @ 30 A |
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