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0Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH05SG60CXKSA2DIODE SCHOTTKY 600V 5A TO220-2 Infineon Technologies |
2,292 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
IDP2308XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
2,082 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
IDP2308T1XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
3,254 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
IDW50E60FKSA1DIODE GEN PURP 600V 80A TO247-3 Infineon Technologies |
2,626 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 115 ns | 40 µA @ 600 V | 600 V | 80A (DC) | -40°C ~ 175°C | 2 V @ 50 A | |
|
BAS70E6433HTMA1DIODE SCHOTTKY 70V 70MA SOT23-3 Infineon Technologies |
2,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
IDL06G65C5XUMA2DIODE SCHOTTKY 650V 6A VSON-4 Infineon Technologies |
2,193 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 110 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 150°C | 1.7 V @ 6 A |
|
IDWD40G120C5XKSA1SIC SCHOTTKY 1200V 40A TO247-2 Infineon Technologies |
3,814 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2592pF @ 1V, 1MHz | 0 ns | 332 µA @ 1200 V | 1200 V | 110A (DC) | -55°C ~ 175°C | 1.65 V @ 40 A |
|
D1600U45X122XPSA1DIODE GEN PURP D12026K-1 Infineon Technologies |
2,826 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 4500 V | 4500 V | 1560A | 140°C (Max) | 4.3 V @ 2500 A | |
|
|
GATELEAD28133HPSA1ACCY GATE LEAD FOR MODULE Infineon Technologies |
2,033 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GLPB3460G1K1457XPSA1THYR / DIODE MODULE DK Infineon Technologies |
3,378 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
BAS21E6433HTMA1DIODE GEN PURP 200V 250MA SOT23 Infineon Technologies |
2,421 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
|
BAS116E6433HTMA1DIODE GEN PURP 80V 250MA SOT23-3 Infineon Technologies |
2,344 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 1.5 µs | 5 nA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
D970N06TXPSA1DIODE GEN PURP 600V 970A Infineon Technologies |
2,325 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 600 V | 600 V | 970A | -40°C ~ 180°C | 970 mV @ 750 A | |
|
D650N02TXPSA1DIODE GEN PURP 200V 650A Infineon Technologies |
3,228 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 200 V | 200 V | 650A | -40°C ~ 180°C | 950 mV @ 450 A | |
|
|
IDC50S120C5X7SA1SIC CHIP Infineon Technologies |
2,463 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
D1230N18TXPSA1DIODE GEN PURP 1.8KV 1230A Infineon Technologies |
3,484 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 1800 V | 1800 V | 1230A | -40°C ~ 180°C | 1.063 V @ 800 A | |
|
|
D1230N16TXPSA1DIODE GEN PURP 1.6KV 1230A Infineon Technologies |
2,795 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 1600 V | 1600 V | 1230A | -40°C ~ 180°C | 1.063 V @ 800 A | |
|
|
ND104N16KHPSA1DIODE GP 1.6KV 104A BG-PB20-1 Infineon Technologies |
2,002 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1600 V | 1600 V | 104A | -40°C ~ 135°C | - | |
|
D1050N18TXPSA1DIODE GEN PURP 1.8KV 1050A Infineon Technologies |
2,141 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 60 mA @ 1800 V | 1800 V | 1050A | -40°C ~ 180°C | 1 V @ 1000 A | |
|
IDK04G65C5XTMA2DIODE SCHOTTKY 650V 4A TO263-2 Infineon Technologies |
3,207 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 670 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.8 V @ 4 A |
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